Slow-wave structure (SWS) is a core part of a traveling-wave-tube (TWT) amplifier. In this letter, the planar microstrip meander SWS on a dielectric substrate at V-band (50-70 GHz) is studied. The basic electromagnetic parameters of the SWS are calculated. The SWS circuits are designed and fabricated, and good transmission characteristics are measured. The SWS developed is characterized by a wide bandwidth and a relatively-large slow-wave factor, and is suitable for a low-voltage TWT with the sheet electron beam.

In this Letter, we report for the first time on the experimental observation of the generalized synchronization regime in the microwave electronic systems, namely, in the multicavity klystron generators. A new approach devoted to the generalized synchronization detection has been developed. The experimental observations are in the excellent agreement with the results of numerical simulation. The observed phenomena gives a strong potential for new applications requiring microwave chaotic signals.

We report the results of the design, simulation, fabrication, and cold-test measurements of millimeter-band 2D planar microstrip slow-wave structures (SWSs) on dielectric substrates. Such structures have a high slow-wave factor, which allows for low-voltage operation and reduction in the size and weight of the device. A low-cost and flexible fabrication technology based on magnetron sputtering and subsequent laser ablation has been developed and is reported in the paper. Microstrip meander-line SWS circuits at V-, W-, and D-bands have been fabricated and characterized. The fabrication of ring-bar planar SWSs by the photolithographic method is also discussed. Experimental measurement of S-parameters of the fabricated structures reveals good transmission properties. Return loss (S11) does not exceed −10 dB and attenuation is about 2 dB/cm in the V-band, 10 dB/cm in the W-band, and 8.5 dB/cm in the D-band.

For high-power and compact sub-terahertz (THz) sources, a high-current electron beam is a crucial component. In this article, a miniaturized sheet-electron-beam source has been developed for generation of the high-current-density electron beam. It consists of a hollow cathode with a 3-mm diameter circular aperture, an anode with a 1.25 mm $\times0.25$ mm rectangular aperture, and an interelectrode three-gap region with optimized dimension. The developed electron beam source has been operated in self-breakdown conditions for applied gap voltage ranging between 10 and 30 kV. The sheet electron beam has been successfully propagated for nearly 45 mm inside the drift space without the assistance of an external magnetic field due to the space charge neutralization effect. It has demonstrated good transmission characteristics with more than 50-A beam current and beam current loss of around 25%.

The electrodynamic microstructure technologies for production of millimeter and submillimeter-wave vacuum microelectronic devices are reviewed, including photolithography, deep reactive ion etching, computer numerical control micro- and nanomilling, electro-erosive micromachining, and additive technologies: 3D printing, selective laser sintering, and selective laser melting. An original approach to manufacture of planar slow-wave systems based on magnetron sputtering and laser ablation is discussed. Technological tolerances and surface roughness that can be obtained using the considered technologies are compared.