Karen N. Olan-Nuñez received a B.S. degree in Electronic Engineering from the Technological Institute of Minatitlan (Veracruz, México) in 2017 and a M.Sc. degree from the INAOE in 2019. She is currently working toward her Ph.D. in Electronics at INAOE.
Her current research interests include the design and modeling of on-chip antennas, metamaterials-based antennas, reconfigurable antennas, absorbers, and devices for high frequency applications.
Karen N. Olan-Nuñez received a B.S. degree in Electronic Engineering from the Technological Institute of Minatitlan (Veracruz, México) in 2017 and a M.Sc. degree from the INAOE in 2019. She is currently working toward her Ph.D. in Electronics at INAOE.
Her current research interests include the design and modeling of on-chip antennas, metamaterials-based antennas, reconfigurable antennas, absorbers, and devices for high frequency applications.