Since the revival of multiferroic laminates with giant magnetoelectric (ME) coefficients, a variety of multifunctional ME devices, such as sensor, inductor, filter, antenna etc. have been developed. Magnetoelastic materials, which couple the magnetization and strain together, have recently attracted ever-increasing attention due to their key roles in ME applications. This review starts with a brief introduction to the early research efforts in the field of multiferroic materials and moves to the recent work on magnetoelectric coupling and their applications based on both bulk and thin-film materials. This is followed by sections summarizing historical works and solving the challenges specific to the fabrication and characterization of magnetoelastic materials with large magnetostriction constants. After presenting the magnetostrictive thin films and their static and dynamic properties, we review micro-electromechanical systems (MEMS) and bulk devices utilizing ME effect. Finally, some open questions and future application directions where the community could head for magnetoelastic materials will be discussed.

A major obstacle during the design of brain- computer interfaces is the unavailability of a neural implantable device that is μ-scale in size and is wireless, self-powered, and long-lasting. The current state-of-the-art implantable devices suffer from various limitations. Electromagnetic-based wireless devices are big in size because of their large antenna, which must be larger than one-tenth of the wavelength of the operational frequency. Ultrasound-based wireless devices, in addition to their low data rate, have massive loss in the skull and need an intermediate electromagnetic transceiver under the skull. Furthermore, almost all state-of-the-art wireless devices use micro-electrodes for neuronal recording, which are not reliable in long-term monitoring applications because of the direct contact between the tissue and metal electrodes. In this paper, we propose a novel, wireless, and ultra-compact implantable device termed NanoNeuroRFID. At the core of this device, there is a magnetoelectric (ME) antenna array. ME antennas are smart and ultra-miniaturized (<;200 μm diameter) and can perform multiple tasks. First, can harvest electromagnetic energy to power the NanoNeuroRFID system. Their limit of the detection for RF magnetic fields is 40 pT; second, they can sense quasi-static neuronal magnetic fields as small as 200 pT without direct contact to the tissue, allowing a long lifetime and reliable neural recording; and third, they can communicate with an external transceiver, and their operational frequency could be 10 to 100 s of MHz, where tissue loss is small.

The strong strain-mediated magnetoelectric (ME) coupling found in thin-film ME heterostructures has attracted an ever-increasing interest and enables realization of a great number of integrated multiferroic devices, such as magnetometers, mechanical antennas, RF tunable inductors and filters. This paper first reviews the thin-film characterization techniques for both piezoelectric and magnetostrictive thin films, which are crucial in determining the strength of the ME coupling. After that, the most recent progress on various integrated multiferroic devices based on thin-film ME heterostructures are presented. In particular, rapid development of thin-film ME magnetometers has been seen over the past few years. These ultra-sensitive magnetometers exhibit extremely low limit of detection (sub-pT/Hz^1/2) for low-frequency AC magnetic fields, making them potential candidates for applications of medical diagnostics. Other devices reviewed in this paper include acoustically actuated nanomechanical ME antennas with miniaturized size by 1–2 orders compared to the conventional antenna; integrated RF tunable inductors with a wide operation frequency range; integrated RF tunable bandpass filter with dual H- and E-field tunability. All these integrated multiferroic devices are compact, lightweight, power-efficient, and potentially integrable with current complementary metal oxide semiconductor (CMOS) technology, showing great promise for applications in future biomedical, wireless communication, and reconfigurable electronic systems.

Tremendous progress has been made in boosting the realization of magnetoelectric (ME) magnetometers based on the direct ME effect (DME) for bulk ME laminates. In this work, we studied the potential of an electrically driven bulk magnetic field sensor based on the converse ME effect (CME). Starting from a discussion about the dependence of the induced voltage from the pickup coil on coil parameters and the CME coupling process, we then experimentally measured the optimized bias field in the off resonance region and observed the double-peak phenomenon that occurred within the resonance window. More importantly, the optimization with respect to the sample's dimension, excitation voltage, and frequency was conducted to improve the sensing capability for low-frequency magnetic fields. It was experimentally found that a limit of detection (LoD) of ∼115 pT for a magnetic field of 10 Hz and ∼300 pT for a magnetic field of 1 Hz was achieved when exciting the ME laminate at 1 V without any bias field. In this case, the power consumption for the ME laminate is only 0.56 mW, which is much lower compared to tens of milliwatts (10–100 mW) for optically pumped or flux gate sensors (excluding the power consumption from the electronics) and also shows advantages over conventional ME magnetic field sensors based on DME with a current pump.