FinFET and FDSOI structures could further improve transistor’s performance and, however, also introduce some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, by utilizing the ultra-fast sub-1 ns measurement technique, I-V characteristics of FinFETs and FDSOI devices at different switch speeds are obtained. Furthermore, dynamic SHE phenomena as well as the time-resolved channel temperature change during transistor’s switch on and off are able to be experimentally observed. And, more accurate device parameters like ballistic transport efficiency are extracted by the ultra-fast measurements. Moreover, it is experimentally confirmed that several nanoseconds are required to heat up the channel of transistors by the direct electrical characterization and, therefore, in sub-10 nm devices, SHE might be alleviated under high frequency/speed operations.

La-doped Hf_0.5Zr_0.5O₂ (HZO) ferroelectrics have demonstrated great potential to solve the endurance challenge of hafnia-based ferroelectric memory. In this work, we systematically studied the doping effects of La in HZO by ab initio simulations and theoretically compared it with three other commonly used group-III dopants (Al, Y, and Gd). The physical mechanisms behind superior endurance are thoroughly analyzed based on the calculation results regarding phase stability, oxygen vacancy formation energy, migration barrier, and electronic structures. It has been discovered that among the four dopant candidates, La has the strongest stabilization effect of the ferroelectric phase in HZO. Also, under stoichiometric doping conditions, La and other group-III dopants were observed to increase the oxygen vacancy formation energy and make HZO less susceptible to dielectric breakdown. Finally, La, Al, or Y dopants replacing Hf or Zr can getter migrating oxygen vacancies and passivate the associated defect states in the bandgap. Based on these observations, guidelines were proposed for designing the doping method and concentrations to achieve the best endurance.

In this work, we developed an asymmetric Ge-based RRAM using fully CMOS compatible process. Due to the adoption of a thin AlOx/GeOx interfacial layer, the TiN/HfOx/AlOx/GeOx/Ge structured RRAM shows both excellent switching behavior and diode-like rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory (CAM) was proposed and demonstrated, and its function was verified by experimental measurements. This novel two asymmetric RRAM based TCAM cell with only 8F2 size is very promising for future energy and area efficient IoT and internet applications.

In this letter, wake-up free La-doped HfO2-ZrO2 (HZO) ferroelectrics are experimentally fabricated using an atomic layer-specific doping (ALSD) technique, which selectively introduces La dopants at effective locations to facilitate the formation of ferroelectric orthorhombic phase. With this technique, robust La-doped HZO ferroelectric devices that are mostly free from the undesired wake-up effect and anti-ferroelectricity were demonstrated over a large La doping range (from 2.9 to 11.5%). Moreover, large remanent polarization and good endurance were achieved at the same time (>107 cycles). The outstanding performances can be attributed to the effective stabilization of ferroelectric orthogonal phase and the suppression of tetragonal phase, through controlling of the dopants’ local environment. Thus, ALSD is an effective approach to achieve reliable, wake-up free and CMOS-compatible HZO-based ferroelectrics.

The ultra-thin body and ultra-thin buried-oxide (UTBB) Germanium-on-Insulator (GeOI) substrates have been fabricated by direct wafer bonding and polishing techniques. The Ge and BOX layer thicknesses are as thin as 9 and 13 nm, respectively. The UTBB GeOI substrates exhibit superior crystal quality (similar to the bulk single crystalline Ge) and sufficiently reduced surface roughness. As a result, the Hall hole mobility of UTBB GeOI reaches 1330 cm²/V s with a carrier concentration of 2 × 10¹⁶cm⁻³. The inversion mode UTBB GeOI nMOSFETs have also been demonstrated with suppressed mobility degradation during Ge layer thinning, indicating the feasibility of this GeOI substrate formation technique in future CMOS technologies.

A two-step oxygen vacancy (V _O ) engineering technique is presented to enhance the ferroelectricity of Hf _0.5 Zr _0.5 O ₂ (HZO) film with superior dielectric reliability. The V _O engineering consists of two steps: 1) V _O formation in the HZO film to stabilize the orthorhombic phase and 2) V _O passivation to annihilate the V _O -related defects without degrading the ferroelectric properties. In addition, we further investigate the feasibility of the two-step V _O engineering at a low thermal budget process (400 °C) for back-end-of-line (BEOL) applications. Superior remnant polarization (2P $_{\text {r}} = 43\,\,\mu \text{C}$ /cm ² ) and high endurance of $> 10^{{8}}$ cycles are demonstrated in HZO thin films processed at 400 °C, which are comparable to those processed at high temperatures.