ZnSeO₃ nanocrystals with an orthorhombic structure were synthesized by electrochemical and chemical deposition into SiO₂/Si ion-track template formed by 200 MeV Xe ion irradiation with the fluence of 10⁷ ions/cm². The lattice parameters determined by the X-ray diffraction and calculated by the CRYSTAL computer program package are very close to each other. It was found that ZnSeO₃ has a direct band gap of 3.8 eV at the Γ-point. The photoluminescence excited by photons at 300 nm has a low intensity, arising mainly due to zinc and oxygen vacancies. Photoluminescence excited by photons with a wavelength of 300 nm has a very low intensity, presumably due to electronic transitions of zinc and oxygen vacancies.

We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO₃) deposited into SiO₂/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 10⁸ ions/cm²) followed by etching in HF solution. ZnSeO₃ nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl₂ and SeO₂ as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO₃/SiO_2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO₃ phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO₃(NCs)/SiO_2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10⁻⁶ Ohm⁻¹·cm⁻¹.

Бұл жұмыста SiO₂/Si тректік темплейттерінде химиялық тұндыру әдісімен синтезделген мырыш селениті (ZnSeO₃) нанокристалдарының құрылымдық, оптикалық және электрфизикалық қасиеттеріне жоғары температуралық күйдірудің әсері зерттелді. Мырыш селениті нанокристалдары мырыш хлориді және селен диоксиді прекурсорлары негізінде бөлме 18 °C температурасында химиялық тұндыру арқылы алынды. Алынған үлгілер вакуум жағдайында 800 және 1000 °C температураларда термиялық өңдеуден өткізілді. Үлгілердің морфологиясы сканерлеуші электрондық микроскопия әдісімен, кристалдық құрылымы рентгендік дифракциялық талдау арқылы, оптикалық қасиеттері фотолюминесценция спектроскопиясымен, ал электрфизикалық сипаттамалары ток-кернеу тәуелділіктерін өлшеу арқылы зерттелді. Рентгенқұрылымдық талдау нәтижелері бастапқы үлгілерде орторомбтық құрылымды мырыш селениті фазасының түзілгенін көрсетті. Жоғары температуралық күйдіру барысында мырыш селениті нанокристалдарының ішінара ыдырауы байқалып, 800 °C температурада тетрагональды құрылымды мырыш селениді фазасы, ал 1000 °C температурада гексагональды құрылымды мырыш оксиді фазасы қалыптасатыны анықталды. Фотолюминесценция спектрлерінде 400–600 нм аралығындағы кең сәулелену жолағы байқалып, оның ақаулық күйлермен байланысты екендігі көрсетілді. Күйдіру температурасының артуы көк және күлгін сәулеленудің қарқындылығын арттырып, спектрлік құрамның өзгеруіне алып келетіні анықталды. Электрлік өлшеулер нәтижесінде зерттелген құрылымдардың электрондық өткізгіштік типіне жататыны және олардың ток-кернеу сипаттамаларының айқын сызықтық емес тәуелділік көрсететіні анықталды. Ең жоғары меншікті электрөткізгіштік 800 °C температурада күйдірілген үлгі үшін байқалды. Алынған нәтижелер жоғары температуралық өңдеудің мырыш селениті нанокристалдарының фазалық құрамына, фотолюминесценциялық қасиеттеріне және электрөткізгіштік параметрлеріне елеулі әсер ететінін көрсетті. Бұл материалдардың оптоэлектроника және наноэлектроника құрылғыларында қолданылу перспективаларын кеңейтеді. Кілтті сөздер: мырыш селениті, нанокристалдар, химиялық тұндыру, термиялық өңдеу, фотолюминесценция, электрөткізгіштік, рентгендік дифракция.

This work presents an efficient method for synthesising arrays of copper oxide (CuO) nanocrystals in track-etched dielectric structures via electrochemical deposition (ECD) and provides a comprehensive study of their structural, morphological, and optical properties. Electrochemical deposition was performed in a carefully selected electrolyte under a potentiostatic regime, enabling reproducible and selective filling of the nanocanals within the track matrix. The template consisted of a porous silicon dioxide structure formed by ion irradiation followed by etching. The ECD method is characterised by technological simplicity, low energy consumption, environmental safety, the absence of high-temperature annealing and expensive vacuum equipment requirements, and the possibility of deposition on substrates with complex geometries. The surface morphology and pore topography were analysed using scanning electron microscopy (SEM), while the phase composition and crystal structure of the deposited material were confirmed by X-ray diffraction (XRD), revealing the formation of a monoclinic CuO phase (space group C2/c). Photoluminescence studies revealed emission peaks in the 3.11–3.22 eV range, corresponding to the violet region of the spectrum. These peaks are attributed to interband transitions and recombination of charge carriers via localised defect states in the CuO crystal structure. The influence of pore geometry and deposition conditions on the distribution and quality of channel filling was also highlighted. The obtained results demonstrate the potential of the proposed approach for creating functional CuO nanostructures with tailored properties and geometry. The developed methodology can be applied in the fabrication of sensor systems, photonic electronic components, and energy-efficient devices based on transition metal oxides.

This work presents a study of copper selenite nanocrystals, obtained for the first time by chemical deposition (template synthesis) in a SiO₂/Si track template, and investigates their properties. The obtained nanostructures were subjected to structural, optical, and electrical analysis. After deposition, X-ray diffraction (XRD) analysis confirmed the formation of the orthorhombic phase CuSeO₃. Subsequent annealing in a vacuum at 800 °C and 1000 °C led to successive phase transformations: to the monoclinic phase and, finally, to the triclinic polymorph of copper selenite. Photoluminescence (PL) analysis showed that the intensity and spectral position of the emission peaks vary depending on the crystal structure, which is associated with changes in defects and bandgap width as a result of heat treatment. Current–voltage characteristic (CVC) measurements showed that the phase composition significantly affects electrical conductivity. In particular, the transition to the triclinic phase after annealing at 1000 °C led to noticeable changes in optical and electrical properties compared to the initial material. Thus, a direct relationship has been established between heat treatment conditions, crystal structure, and functional properties of CuSeO₃-based materials, opening up possibilities for their application in photonics and electronics.

This paper presents a study of copper selenide nanowires obtained for the first time by template synthesis. This method allows precise control of the size and morphology of nanostructures, which indicates its high efficiency in obtaining homogeneous and well-deposited copper selenide nanowires. The SiO₂/Si track template was obtained by irradiation on a DC-60 accelerator (Astana, Kazakhstan), after which the track template was chemically etched to form cylindrical pores. After irradiation and further chemical etching, copper selenide was deposited into the SiO₂/Si track template by electrochemical deposition method. The morphology and amount of deposited nanoprecipitates were observed using a QUANTA 200i electron microscope with 3D scanning. X-ray diffractometer was used to determine the crystallographic structure of copper selenide nanoprecipitates. X-ray diffraction analysis (XRD) was carried out on a Rigaku miniflex 600 X-ray diffractometer. The XRD analysis revealed the formation of cubic crystalline phase of copper selenide nanowires electrochemically deposited on SiO₂/Si track template. Photoluminescence (PL) spectra were measured on a CM2203 spectrofluorimeter to study the optical properties of the nanowires. The PL spectra were recorded at room temperature from 300 nm to 800 nm in 5 nm steps under a xenon lamp. Differential decomposition of the FL spectra showed two main peaks (2.5 and 2.8 eV).