The ESR spectra of nanostructured samples of monoclinic ZrO₂ irradiated by electrons with energies of 130 keV, 10 MeV, and by a beam of Xe ions (220 MeV) have been studied. It has been established that irradiation of samples with electrons (10 MeV) and ions leads to the formation of radiation-induced F⁺ centers in them. Thermal destruction of these centers is observed in the temperature range of 375–550 K for electron-irradiated and 500–700 K for ion-irradiated samples. It is shown that the decrease in the concentration of F⁺ centers is associated with the emptying of traps responsible for thermoluminescence (TL) peaks in the specified temperature range. In the samples irradiated with an ion beam, previously unidentified paramagnetic centers with g = 1.963 and 1.986 were found, the formation of which is likely to involve Zr³⁺ ions and oxygen vacancies. Thermal destruction of these centers occurs in the temperature range from 500 to 873 K.

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10¹¹ cm⁻² ÷ 4.87 × 10¹³ cm⁻²) and Bi (710 MeV, 1 × 10¹¹ cm⁻² ÷ 1 × 10¹³ cm⁻²) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm⁻¹ line in the Raman spectra and scanning electron microscopy.