In In this study, the optical properties of magnesium-aluminate spinel were examined after being irradiated with 220 MeV Xe ions. The research aimed to simulate the impact of nuclear fuel fission fragments on the material. The following measurements were taken during the experiments: transmission spectra in the IR region (190–7000) nm, optical absorption spectra in the range (1.2–6.5) eV, and Raman spectra were measured along the depth of ion penetration from the surface to 30 µm. A peak with a broad shape at approximately 5.3 eV can be observed in the optical absorption spectrum of irradiated spinel crystals. This band is linked to the electronic color centers of F⁺ and F. Meanwhile, the band with a maximum at ~(3–4) eV is attributed to hole color centers. Apart from the typical Raman modes of an unirradiated crystal, additional modes, A1g* (720 cm⁻¹), and Eg* (385 cm⁻¹), manifested mainly as an asymmetric shoulder of the main Eg mode, are also observed. In addition, the Raman spectroscopy method showed that the greatest disordering of crystallinity occurs in the near-surface layer up to 4 μm thick. At the same time, Raman scattering spectroscopy is sensitive to structural changes almost up to the simulated value of the modified layer, which is an excellent express method for certifying the structural properties of crystals modified by swift heavy ions.

Samples of ZrO₂ ceramics with different concentrations of impurity titanium ions were synthesized by mixing zirconium and titanium oxide powders in different mass ratios. The X-ray diffraction analysis was used to determine the phase composition, lattice parameters, and crystallite size of the ceramics with varying dopant concentrations. Upon irradiation of the samples with 220 MeV Xe ions to a fluence of 10¹⁰ ions/cm², a decrease in the intensity of the pulsed cathodoluminescence band at 2.5 eV was observed. Additionally, ion irradiation resulted in the emergence of a new thermoluminescence peak at 450–650 K attributed to radiation-induced traps of charge carriers. Further analysis revealed that the thermoluminescence curves of samples irradiated with electrons and ions comprise a superposition of several elementary peaks. Notably, a complex non-monotonic dependence of cathodo- and thermoluminescence intensity on titanium concentration was observed, suggesting the influence of concentration quenching and the presence of tunneling transitions.

Electrochemical deposition into a prepared SiO₂/Si-p ion track template was used to make orthorhombic SnO₂ vertical nanowires (NWs) for this study. As a result, a SnO₂-NWs/SiO₂/Si nanoheterostructure with an orthorhombic crystal structure of SnO₂ nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO₂-NWs/SiO₂/Si nanoheterostructure made this way has many p-n junctions.

The impact of 230-MeV Xe¹³² ion irradiation on the structural, optical, and luminescent properties of YAG:Ce single crystals is investigated over a fluence range of 10¹¹–10¹⁴ ions/cm². Optical absorption; cathodo-, X-ray, and photoluminescence; and X-ray diffraction are employed to analyze radiation-induced changes. Irradiation leads to the formation of Frenkel (F, F⁺) and antisite defects and attenuates Ce³⁺ emission (via enhanced nonradiative processes and Ce³⁺ → Ce⁴⁺ recharging). A redistribution between the fast and slow components of the Ce³⁺-emission is considered. Excitation spectra show the suppression of exciton-related emission bands, as well as a shift of the excitation onset due to increased lattice disorder. XRD data confirm partial amorphization and a high level of local lattice disordering, both increasing with irradiation fluence. These findings provide insight into radiation-induced processes in YAG:Ce, which are relevant for its application in radiation–hard scintillation detectors.

This study presents a comprehensive Raman spectroscopic and mechanical investigation of Gd₃Ga₅O₁₂ (GGG) single crystals irradiated with 231 MeV ¹³¹Xe ions at fluences ranging from 1 × 10¹¹ to 3.3 × 10¹³ ions/cm². Raman analysis reveals that all fundamental vibrational modes of the garnet structure remain observable up to the highest fluence, with the preservation of garnet crystalline topology/absence of secondary crystalline phases. However, significant line broadening (FWHM increase by 20–100%) and low-frequency shifts indicate progressive lattice disorder and phonon-defect scattering. High-frequency Ga-O stretching modes (A_1g, T_2g ~740 cm⁻¹) remain the most resistant to irradiation, while low-energy translational modes involving Gd³⁺ ions exhibit pronounced degradation and partial disappearance at high fluence. Complementary nanoindentation measurements show radiation-induced softening: hardness decreases by up to ≈60% at 3.3 × 10¹³ ions/cm², consistent with amorphization and overlapping ion tracks (~10–12 μm deep). Raman spectroscopy shows that the garnet lattice remains as the only crystalline phase up to 3.3 × 10¹³ ions/cm², while significant line broadening, mode suppression and a strong hardness decrease indicate progressive structural disorder and partial amorphization of the near-surface region. These results demonstrate that GGG maintains crystalline integrity below the track-overlap threshold (~6 keV/nm) but undergoes strong structural relaxation and mechanical weakening once this limit is exceeded. A new analytical methodology has been developed to quantify radiation-induced structural degradation.

A synthetic single crystal of magnesium-aluminate spinel was irradiated perpendicularly to the (111) plane with swift heavy xenon ions with an energy of 220 MeV. The modified layer was attested based on Raman scattering spectra recorded while focusing on the surface. A decrease in surface crystallinity was observed, reflected in the changes in fundamental optical characteristics such as the band gap and the energies of static and dynamic disorder. In this study, we demonstrate, along with the modification of optical characteristics and the formation of a disordered layer, the creation of new optically active centers. The luminescent properties of these centers were analyzed. The effect of temperature flare-up in the 3.4 eV band of the excitation spectrum was determined. The low sensitivity of Cr³⁺ luminescence to SHI is demonstrated.