Purpose: The electron linac ElectronFlash installed at Institut Curie (Orsay, France) is entirely dedicated to FLASH irradiation for radiobiological and pre-clinical studies. The system was designed to deliver an ultra-high-dose rate per pulse (UHDR) (above ${10}^6$ Gy/s) and a very high average dose rate at different energies and pulse durations. A campaign of tests and measurements was performed to obtain a full reliable characterizations of the electron beam and of the delivered dose, which are necessary to the radiobiological experiments. Methods: A Faraday cup was used to measure the electron charges in a single RF pulse. The percentage depth dose (PDD) and the transverse dose profiles, at the energies of 5 MeV and 7 MeV, were evaluated employing Gafchromic films EBT-XD for two Poly-methylmethacrylate (PMMA) applicators with irradiation sizes of 30 mm and 120 mm, normally used for in vivo and in vitro experiments, respectively. The results were compared with Monte Carlo (MC) simulations. Results: The measurements were performed during a period of a few months in which the experimental set up was adapted and tuned in order to characterize the electron beam parameters and the values of delivered doses before the radiobiological experiments. The measurements showed that the dose parameters, obtained at the energy of 5 MeV and 7 MeV with different applicators, fulfill the FLASH regime, with a maximum value of an average dose rate of 4750 Gy/s, a maximum dose per pulse of 19 Gy and an instantaneous dose rate up to 4.75 $\times {10}^6$ Gy/s. By means of the PMMA applicators, a very good flatness of the dose profiles was obtained at the cost of a reduced total current. The flatness of the large field is reliable and reproducible in radiobiological experiments. The measured PDD and dose profiles are in good agreement with Monte Carlo simulations with more than $95\%$ of the gamma-index under the thresholds of 3 mm/$3\%$. Conclusions: The results show that the system can provide UHDR pulses totally satisfying the FLASH requirements with very good performances in terms of beam profile flatness for any size of the fields. The monitoring of electron beams and the measurement of the dose parameters played an important role in the in vivo and in vitro irradiation experiments performed at the Institut Curie laboratory.

The simulation of beam dynamics in the presence of collective effects requires a strong computational effort to take into account, in a self-consistent way, the wakefield acting on a given charge and produced by all the others. Generally this is done by means of a convolution integral or sum. Moreover, if the electromagnetic fields consist of resonant modes with high quality factors, responsible, for example, for coupled bunch instabilities, a charge is also affected by itself in previous turns, and a very long record of wakefield must be properly taken into account. In this paper we present a new simulation code for the longitudinal beam dynamics in a circular accelerator, which exploits an alternative approach to the currently used convolution sum, reducing the computing time and avoiding the issues related to the length of wakefield for coupled bunch instabilities. With this approach it is possible to simulate, without the need for large computing power, simultaneously, the single and multibunch beam dynamics including intrabunch motion. Moreover, for a given machine, generally both the coupling impedance and the wake potential of a short Gaussian bunch are known. However, a classical simulation code needs in input the so-called “Green” function, that is the wakefield produced by a point charge, making necessary some manipulations to use the wake potential instead of the Green function. The method that we propose does not need the wakefield as input, but a particular fitting of the coupling impedance requiring the use of the resonator impedance model, thus avoiding issues related to the knowledge of the Green function. The same approach can also be applied to the transverse case and to linear accelerators as well.

Terahertz (THz) technology is a promising research field for various applications in basic science and technology. In particular, THz imaging is a new field in imaging science, where theories, mathematical models and techniques for describing and assessing THz images have not completely matured yet. In this work, we investigate the performances of a broadband pulsed THz imaging system (0.2–2.5 THz). We characterize our broadband THz beam, emitted from a photoconductive antenna (PCA), and estimate its point spread function (PSF) and the corresponding spatial resolution. We provide the first, to our knowledge, 3D beam profile of THz radiation emitted from a PCA, along its propagation axis, without the using of THz cameras or profilers, showing the beam spatial intensity distribution. Finally, we evaluate the THz image formation on a test-sample composed by a regular linen natural pattern.

The problem of many holes in a coaxial beam pipe is studied by means of the modified Bethe theory. The electromagnetic fields propagating in the coaxial region couple the equivalent dipole moments of the holes. The effect of the coupling on the longitudinal impedance and on the loss factor is investigated, showing that the interference phenomena are significant for such geometries.

Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10–20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges.