Excitable optoelectronic devices represent one of the key building blocks for implementation of artificial spiking neurons in neuromorphic (brain‐inspired) photonic systems. This work introduces and experimentally investigates an opto‐electro‐optical (O/E/O) artificial neuron built with a resonant tunnelling diode (RTD) coupled to a photodetector as a receiver and a vertical cavity surface emitting laser as a transmitter. We demonstrate a well‐defined excitability threshold, above which the neuron produces optical spiking responses with characteristic neural‐like refractory period. We utilise its fan‐in capability to perform in‐device coincidence detection (logical AND) and exclusive logical OR (XOR) tasks. These results provide first experimental validation of deterministic triggering and tasks in an RTD‐based spiking optoelectronic neuron with both input and output optical (I/O) terminals. Furthermore, we also investigate in simulation the prospects of the proposed system for nanophotonic implementation in a monolithic design combining a nanoscale RTD element and a nanolaser; therefore demonstrating the potential of integrated RTD‐based excitable nodes for low footprint, high‐speed optoelectronic spiking neurons in future neuromorphic photonic hardware.

Nanophotonic spiking neural networks (SNNs) based on neuron-like excitable subwavelength (submicrometre) devices are of key importance for realizing brain-inspired, power-efficient artificial intelligence (AI) systems with high degree of parallelism and energy efficiency. Despite significant advances in neuromorphic photonics, compact and efficient nanophotonic elements for spiking signal emission and detection, as required for spike-based computation, remain largely unexplored. In this invited perspective, we outline the main challenges, early achievements, and opportunities toward a key-enabling photonic neuro-architecture using III–V/Si integrated spiking nodes based on nanoscale resonant tunnelling diodes (nanoRTDs) with folded negative differential resistance. We utilize nanoRTDs as nonlinear artificial neurons capable of spiking at high-speeds. We discuss the prospects for monolithic integration of nanoRTDs with nanoscale light-emitting diodes and nanolaser diodes, and nanophotodetectors to realize neuron emitter and receiver spiking nodes, respectively. Such layout would have a small footprint, fast operation, and low power consumption, all key requirements for efficient nano-optoelectronic spiking operation. We discuss how silicon photonics interconnects, integrated photorefractive interconnects, and 3D waveguide polymeric interconnections can be used for interconnecting the emitter-receiver spiking photonic neural nodes. Finally, using numerical simulations of artificial neuron models, we present spike-based spatio-temporal learning methods for applications in relevant AI-based functional tasks, such as image pattern recognition, edge detection, and SNNs for inference and learning. Future developments in neuromorphic spiking photonic nanocircuits, as outlined here, will significantly boost the processing and transmission capabilities of next-generation nanophotonic spike-based neuromorphic architectures for energy-efficient AI applications. This perspective paper is a result of the European Union funded research project ChipAI in the frame of the Horizon 2020 Future and Emerging Technologies Open programme.

We investigate the dynamic behaviour of resonant tunneling diode-photodetectors (RTD-PDs) in which the excitability can be activated by either electrical noise or optical signals. In both cases, we find the characteristics of the stochastic spiking behavior are not only dependent on the biasing positions but also controlled by the intensity of the input perturbations. Additionally, we explore the ability of RTD-PDs to perform optical signal transmission and neuromorphic spike generation simultaneously. These versatile functions indicate the possibility of making use of RTD-PDs for innovative applications, such as optoelectronic neuromorphic circuits for spike-encoded signaling and data processing.

This work reports a nanostructure resonant tunnelling diode-photodetector (RTD-PD) device and demonstrates its operation as a controllable, optically-triggered excitable spike generator. The top contact layer of the device is designed with a nanopillar structure (500 nm in diameter) to restrain the injection current, yielding therefore lower energy operation for spike generation. We demonstrate experimentally the deterministic optical triggering of controllable and repeatable neuron-like spike patterns in the nanostructure RTD-PDs. Moreover, we show the device's ability to deliver spiking responses when biased in either of the two regions adjacent to the negative differential conductance region, the so-called 'peak' and 'valley' points of the current-voltage (I-V) characteristic. This work also demonstrates experimentally key neuron-like dynamical features in the nanostructure RTD-PD, such as a well-defined threshold (in input optical intensity) for spike firing, as well as the presence of spike firing refractory time. The optoelectronic and chip-scale character of the proposed system together with the deterministic, repeatable and well controllable nature of the optically-elicited spiking responses render this nanostructure RTD-PD element as a highly promising solution for high-speed, energy-efficient optoelectronic artificial spiking neurons for novel light-enabled neuromorphic computing hardware.

We report a multi-modal spiking neuron that allows optical and electronic input and control, and wavelength-multiplexing operation, for use in novel high-speed neuromorphic sensing and computing functionalities. The photonic-electronic neuron is built with a micro-scale, nanostructure resonant tunnelling diode (RTD) with photodetection (PD) capability. Leveraging the advantageous intrinsic properties of this RTD-PD system, namely highly nonlinear characteristics, photo-sensitivity, light-induced I–V curve shift, and the ability to deliver excitable responses under electrical and optical inputs, we successfully achieve flexible neuromorphic spike activation and inhibition regimes through photonic-electrical control. We also demonstrate the ability of this RTD-PD spiking sensing-processing neuron to operate under the simultaneous arrival of multiple wavelength-multiplexed optical signals, due to its large PD spectral window (covering the 1310 and 1550 nm telecom wavelength bands). Our results highlight the potential of RTD photonic-electronic neurons to reproduce multiple key excitatory and inhibitory spiking regimes, at high speed (10 s of ns-rate spiking responses, with faster sub-ns regimes theoretically predicted) and low energy (requiring only ∼10 mV and ∼150 µW, electrical and optical input amplitudes, respectively), similar in nature to those commonly found in the biological neurons of the visual system and the brain. This work offers a highly promising approach for the realisation of high-speed, energy-efficient photonic-electronic spiking neurons and spiking neural networks, enabling multi-modal and multi-wavelength operation for sensing and information processing tasks, whilst also yielding enhanced system capacity, performance and parallelism. This work therefore paves the way for innovative high-speed, photonic-electronic, and spike-based neuromorphic sensing and computing systems and artificial intelligence hardware.

We present an electroabsorption modulated laser based on an identical epitaxial scheme, side-wall grating, on- chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance by planarizing with a 5- $\mu \text{m}$ -thick HSQ layer. Furthermore, implementing the electrode with a direct ground-signal-ground probe interface provides a straightforward interconnection that obviates the need for an external circuit and bonding wires. The device operates at 1565 nm wavelength with stable single-mode lasing, no mode-hopping, and a side mode suppression ratio above 35 dB. An extinction ratio of 19.5 dB was recorded at the maximum modulator bias of −4 V. The electrical to optical power response of the modulated signal at–3-dBo demonstrated a 19 GHz bandwidth at an extinction ratio of 7 dB, which supports error-free data transmission up to 27 Gbit/s.