The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with>0.3nmof tuning suitable for atom cooling experiments with the D287Rbatomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.

A chirped-coupling sidewall Bragg grating is proposed to mitigate the nonlinear effects that deteriorate the linewidth in DFB lasers operating at a high power and current regime. This novel grating geometry is analyzed and simulated to extract the optimal design parameters in terms of intra-cavity field distribution. Compared to lasers with uniform Bragg gratings, devices fabricated with a chirped-coupling grating are shown to operate in stable single mode operation over a wider current and power range and exhibit linewidth as narrow as 100 kHz.

A new epitaxial layer design with a double mode expander layer, high refractive index claddings, and an aluminum-free active area has been used to demonstrate distributed feedback lasers operating at 778.1 nm wavelength with reduced Lorentzian linewidth aimed at miniature atomic clock applications. The design also reduces the vertical beam divergence to improve the modal matching with optical fibers as well as maintain the high power output and reduce the emission linewidth. The lasers demonstrate single-mode operation with an over 35 dB side-mode suppression ratio, a power output ≤58 mW, a coupling efficiency to tapered fibers ≤40%, and a Lorentzian linewidth of 3.7 kHz. The performance allowed the free-running distributed feedback lasers to demonstrate spectroscopy of Rb vapor, which resolved the 85Rb and 87Rb two-photon transitions.

The integration of nanophotonic optical phased arrays (OPA) with alkali vapor cells has the potential to enhance the performance of chip-scale atomic systems by enabling novel methods for beam shaping and active alignment in atomic spectroscopy. In this work, we present the first demonstration of an OPA used for precision saturated absorption spectroscopy with a rubidium vapor cell integrated directly on the chip. The OPA, consisting of 64 emitters, expands a sub-micron waveguide mode into a >100 µm diameter free-space beam, optimized for the D2 absorption line of rubidium. We resolved the sub-Doppler hyperfine splittings in both 85Rb and 87Rb isotopes, achieving Lorentzian linewidths ranging from 25 to 40 MHz suitable for stabilizing the cooling lasers in rubidium cold atom systems.

We present an electroabsorption modulated laser based on an identical epitaxial scheme, side-wall grating, on- chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance by planarizing with a 5- $\mu \text{m}$ -thick HSQ layer. Furthermore, implementing the electrode with a direct ground-signal-ground probe interface provides a straightforward interconnection that obviates the need for an external circuit and bonding wires. The device operates at 1565 nm wavelength with stable single-mode lasing, no mode-hopping, and a side mode suppression ratio above 35 dB. An extinction ratio of 19.5 dB was recorded at the maximum modulator bias of −4 V. The electrical to optical power response of the modulated signal at–3-dBo demonstrated a 19 GHz bandwidth at an extinction ratio of 7 dB, which supports error-free data transmission up to 27 Gbit/s.