Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the composite materials. In this study, Cu/Dia composite materials were fabricated using the Spark Plasma Sintering (SPS) process. The results indicate that the agglomeration of diamond particles decreases with increasing particle size and that a uniform distribution is achieved at 200 μm. With an increase in the sintering temperature, the interface bonding is first optimized and then weakened, with the optimal sintering temperature being 900 °C. The addition of Cr to the Cu matrix leads to the formation of Cr₇C₃ after sintering, which enhances the relative density and bonding strength at the interface, transitioning it from a physical bond to a metallurgical bond. Optimizing the diamond particle size increased the thermal conductivity from 310 W/m K to 386 W/m K, while further optimizing the interface led to a significant increase to 516 W/m K, representing an overall improvement of approximately 66%.

W-doped ZnO (WZO) films were deposited on glass substrates by using RF magnetron sputtering at different substrate bias voltages, and the relationships between microstructure and optical and electrical properties were investigated. The results revealed that the deposition rate of WZO films first decreased from 8.8 to 7.1 nm/min, and then increased to 11.5 nm/min with the increase in bias voltage. After applying a bias voltage to the substrate, the bombardment effect of sputtered ions was enhanced, and the films transformed from a smooth surface into a compact and rough surface. All the films exhibited a hexagonal wurtzite structure with a strong (002) preferred orientation and grew along the c-axis direction. When the bias voltage increased, both the residual stress and lattice parameter of the films gradually increased, and the maximum grain size of 43.4 nm was achieved at −100 V. When the bias voltage was below −300 V, all the films exhibited a high average transmittance of ~90% in the visible light region. As the bias voltage increased, the sheet resistance and resistivity of the films initially decreased and then gradually increased. The highest F_OM of 5.8 × 10⁻⁴ Ω⁻¹ was achieved at −100 V, possessing the best comprehensive photoelectric properties.

The Al-Sn alloys with a large melting point difference and large density are widely used in sliding bearings in the aerospace and automobile industries. But the problem of insufficient alloying easily occurs during the preparation process due to the physical properties. This paper investigates the dissolution and diffusion behavior of Al in Sn Melt. The dissolution rates of Al in Sn melts at different temperatures were calculated. The research results show that the Al/Sn diffusion is dominated by the diffusion of Sn into Al, the Sn melt penetrate into the solid Al to form diffusion channel leading to the exfoliation and aggregation of the unmelted Al particles. Then, an electromagnetic field treatment technology was introduced to improve sufficient alloying by regulating the flow field of the metal melt. It can accelerate the diffusion and redistribution of elements at the Al/Sn solid-liquid interface, as well as change the dissolution mechanism of Al/Sn interface.

High-content diamond/Al composites have great potential for application as heat dissipation substrates in high-power electronic devices due to their superior thermal properties. This study addresses the persistent challenge of efficiently and economically preparing high-content diamond/Al composites. The filtration extrusion technique as a novel approach for fabricating these composites and explore the critical impact of diamond particle size on the extrusion process and the resulting microstructures. Our findings reveal that extrusion force remains minimal at the onset of the process but escalates sharply with an increase in diamond content, peaking upon completion of extrusion. Notably, larger diamond particles precipitate a more abrupt rise in extrusion force during displacement. The composites' density and thermal conductivity exhibit an initial increase followed by a decline as the diamond particle size is incremented, while the thermal expansion coefficient shows a progressive rise with size enlargement. These insights are pivotal for optimizing the fabrication parameters to achieve high-performance diamond/Al composites for thermal management applications.

As an important high-power impulse magnetron sputtering (HIPIMS) parameter, charge voltage has a significant influence on the microstructure and properties of hard coatings. In this work, the Mo–Cu–V–N coatings were prepared at various charge voltages using HIPIMS technique to study their mechanical and tribological properties. The microstructure was analyzed by scanning electron microscope (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The mechanical and tribological properties were investigated by nano-indentation and ball-on-disc tribometer. The results revealed that all the coatings showed a solid-solution phase of B1-MoVN, the V atoms dissolved into face-centered cubic (FCC) B1-MoN lattice by partial substitution of Mo, and formed a solid-solution phase. Even at a high Cu content (~8.8 at. %), the Cu atoms existed as an amorphous phase. When the charge voltage increased, more energy was put into discharge, and the microstructure changed from coarse structure into dense columnar structure, resulting in the highest hardness of 28.2 GPa at 700 V. An excellent wear performance with low friction coefficient of 0.32 and wear rate of 6.3 × 10⁻¹⁷ m³/N·m was achieved at 750 V, and the wear mechanism was dominated by mild abrasive and tribo-oxidation wear.