Kai Li

Dr. Kai Li


Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 February 2024 in Journal of the European Ceramic Society
Verified
Journal Article
Closed access
LBLang Bian
Lang Bian
QWQian Wang
Qian Wang
SHShuai He
Shuai He
JWJie Wu
Jie Wu
KLKai Li
Kai Li
BYBin Yang
Bin Yang

6 January 2025 in Nanomaterials
Verified
Journal Article
Open access
PDF file
ZJZhao Junfeng
Zhao Junfeng
HSHao Su
Hao Su
KLKai Li
Kai Li
HMHaijuan Mei
Haijuan Mei
JZJunliang Zhang
Junliang Zhang
WGWeiping Gong
Weiping Gong
Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the composite materials. In this study, Cu/Dia composite materials were fabricated using the Spark Plasma Sintering (SPS) process. The results indicate that the agglomeration of diamond particles decreases with increasing particle size and that a uniform distribution is achieved at 200 μm. With an increase in the sintering temperature, the interface bonding is first optimized and then weakened, with the optimal sintering temperature being 900 °C. The addition of Cr to the Cu matrix leads to the formation of Cr7C3 after sintering, which enhances the relative density and bonding strength at the interface, transitioning it from a physical bond to a metallurgical bond. Optimizing the diamond particle size increased the thermal conductivity from 310 W/m K to 386 W/m K, while further optimizing the interface led to a significant increase to 516 W/m K, representing an overall improvement of approximately 66%.

26 January 2024 in Journal of the European Ceramic Society
Verified
Journal Article
Closed access
HZHuashan Zheng
Huashan Zheng
ESEnwei Sun
Enwei Sun
KLKai Li
Kai Li
HLHuajie Luo
Huajie Luo
JFJinhui Fan
Jinhui Fan
WCWenwu Cao
Wenwu Cao

12 August 2025 in Materials
Verified
Journal Article
Open access
PDF file
ZJZhao Junfeng
Zhao Junfeng
JZJunliang Zhang
Junliang Zhang
HSHao Su
Hao Su
YZYu Zhang
Yu Zhang
KLKai Li
Kai Li
WGWeiping Gong
Weiping Gong
High-power microelectronic packaging faces critical thermomechanical failures under rapid thermal cycling, primarily due to interfacial stress concentration and warping in conventional homogeneous heat sinks. To address this challenge, this study proposes a novel functionally graded SiC/Al composite with a tailored thermal expansion coefficient (CTE) gradient, designed to achieve adaptive thermal expansion matching between the chip and heat sink. Through multiscale finite element analysis, the stress–strain behavior and warping characteristics of homogeneous (Cu and Al) and gradient materials were systematically investigated. The results show that the gradient SiC/Al design significantly reduces the peak thermal stress and maximum warping deformation. The progressive CTE transition effectively mitigates abrupt interfacial strain jumps and extends device lifespan under extreme thermal loads. This advancement positions gradient SiC/Al composites as a key enabler for next-generation high-density packaging and power electronics requiring cyclic thermal stability. The study provides both theoretical insights into thermomechanical coupling and practical guidelines for designing robust electronic packaging solutions.

19 November 2023 in Crystals
Verified
Journal Article
Open access
PDF file
KLKai Li
Kai Li
HZHuashan Zheng
Huashan Zheng
XQXudong Qi
Xudong Qi
SCShan Cong
Shan Cong
ZZZhenting Zhao
Zhenting Zhao
BYBin Yang
Bin Yang
Relaxor ferroelectrics play a vital role as functional components in electromechanical devices. The observation of micro-scale domain structure evolution under electric bias in relaxor ferroelectrics has posed challenges due to their complex domain morphology characterized by small-sized domains. The present study aims to investigate the dielectric diffusion–relaxation characteristics, domain structure, and domain switching evolution under electric bias in high-performance single crystals of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-33PbTiO3. The findings reveal the presence of strip-like domain patterns that interlock irregular small-sized nanodomains in PIN-PMN-33PT single crystals. Furthermore, the sample undergoes three distinct stages under electric bias, including the nucleation of new domains, the gradual forward expansion of domains, and the lateral expansion of domains. These observations provide valuable insights for understanding and exploring domain engineering techniques in relaxor ferroelectrics.

11 March 2026 in Microstructures
Verified
Journal Article
Open access
PDF file
KLKai Li
Kai Li
QWQian Wang
Qian Wang
YZYiqiao Zhou
Yiqiao Zhou
ZYZehui Yang
Zehui Yang
ZZZuwen Zeng
Zuwen Zeng
Limei ZhengLimei Zheng
Limei Zheng
To meet the escalating demands for high-performance piezoelectric materials in fields such as modern medical diagnostics, precision manufacturing, etc ., we developed a ternary 0.555Pb(Ni1/3Nb2/3)O3-0.145PbZrO3-0.30PbTiO3 (PNN-PZ-PT) piezoelectric ceramic located at the tricritical point of rhombohedral, tetragonal and pseudocubic phases. This ceramic, with coexistence of multiple ferroelectric phases, demonstrates an ultrahigh piezoelectric coefficient d 33 of 1190 picocoulombs per newton (pC/N) and a large relative dielectric constant ε r of 9900. Analysis of the domain structure reveals irregular maze-like nanodomains with strong local disorder. These nanodomain structures exhibit excellent local piezoelectric response and polarization switching characteristics, thereby enhancing the alignment of polarization vectors during poling and ensuring the high stability after being poled. The tricritical point composition with disordered nanodomains can significantly enhance the contribution of polarization to macroscopic piezoelectric properties, offering a promising approach for developing ceramics with superior piezoelectricity.