Laser–arc hybrid welding (LAHW) is known to achieve more stable processes, better mechanical properties, and greater adaptability through the synergy of a laser and an arc. Numerical simulations play a crucial role in deepening our understanding of this interaction mechanism. In this paper, we review the current work on numerical simulations of LAHW, including heat source selection laws, temperature field, flow field, and stress field results. We also discuss the influence of laser–arc interaction on weld defects and mechanical properties and provide suggestions for the development of numerical simulations of LAHW.

The quartz-crystal resonator is the core device for frequency control in modern communication systems and network technology. At present, in modern resonator blanks manufacturing, BOE solution is usually used as the etching solution, but its etching rate is relatively volatile, and the surface morphology of the blanks is prone to defects after etching, which brings certain difficulties to the deep-etching process of the wafer. To solve the above challenges, this paper systematically compares a BOE solution and anhydrous etching solution in terms of etching rate, surface morphology, and electrical properties of the blanks after etching. Seven groups of blanks were etched using different etching solutions with different etching conditions to verify their effect on the surface morphology and electrical properties of quartz blanks. The experimental results suggest that the application of anhydrous etching solution has achieved better surface morphology and electrical properties and can be more suitable for application in batch manufacturing. In general, when using anhydrous etching solution, it is possible to reduce surface roughness by up to 70% and equivalent resistance by 32%, and the etch rate is almost 10 times lower than BOE solution under the same temperature, which is more conducive to the rate control of wafers in the etching process.

According to the theory of elastic–plastic mechanics, the stress and deformation of a die attach structure under a temperature load were studied. An analytical relation between the deformation and the material physical parameters (coefficient of thermal expansion, Young’s modulus, yield stress, tangent modulus, and Poisson’s ratio) and geometric dimensions (thickness and length) was established, and the correctness of the relation was verified through experiments. The trends of the experimental and calculated values were consistent, with errors of about 20%. The increase of interconnect layer thickness and chip thickness and the decrease of chip length are beneficial to reduce the warping deformation.

We present a Ge/MoS2 van der Waals heterojunction photodetector with a short active region constructed using a transfer process. The device exhibits broadband, self-powered, superior device performance within the visible to infrared wavelength (500–1700 nm) operated in a photovoltaic mode. Intriguingly, a sharp increased gain of 10 556 (93) with a varied breakdown voltage of −8.02 V (−6.25 V) under the 700 nm (1550 nm) laser illumination was observed, which was interpreted as the synergistic effect of both soft and avalanche breakdown behavior. These results imply disposable high-sensitivity broadband light-detection potentials with a simple Ge/MoS2 heterojunction, exempting it from the complex and strict construction requirement of conventional avalanche photodetectors.