The two-particle momentum correlation functions between charm mesons (${\mathrm{D}}^{*\pm }$ and ${\mathrm{D}}^{\pm }$) and charged light-flavor mesons (${\pi }^{\pm }$ and ${\mathrm{K}}^{\pm }$) in all charge combinations are measured for the first time by the ALICE Collaboration in high-multiplicity proton–proton collisions at a center-of-mass energy of $\sqrt{s}=13\mathrm{TeV}$. For DK and ${\mathrm{D}}^{*}\mathrm{K}$ pairs, the experimental results are in agreement with theoretical predictions of the residual strong interaction based on quantum chromodynamics calculations on the lattice and chiral effective field theory. In the case of $\mathrm{D}\pi$ and ${\mathrm{D}}^{*}\pi$ pairs, tension between the calculations including strong interactions and the measurement is observed. For all particle pairs, the data can be adequately described by Coulomb interaction only, indicating a shallow interaction between charm and light-flavor mesons. Finally, the scattering lengths governing the residual strong interaction of the $\mathrm{D}\pi$ and ${\mathrm{D}}^{*}\pi$ systems are determined by fitting the experimental correlation functions with a model that employs a Gaussian potential. The extracted values are small and compatible with zero.

Total-ionizing-dose (TID) mechanisms are investigated in 28-nm MOSFETs via DC-static and low-frequency-noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on channel-length, channel-width, and bias condition. Halo implantations improve the radiation tolerance of shorterchannel transistors. Worst-case bias for TID-induced degradation is found with high electric field applied to the gate during irradiation due to increased charge trapping in the upper corner of the STI and in the gate oxide. DC and low-frequency noise measurements show that, at doses up to 100 Mrad(SiO2), radiation-induced degradation is due primarily to positive charge buildup in the STI oxides. At ultra-high doses approaching 1 Grad(SiO2), TID degradation is influenced by charge buildup in the gate oxide and traps at or near the gate/dielectric interface and/or along the STI sidewalls. Worst-case degradation is found in narrower and longer channel devices, due to enhanced charge buildup in the shallow trench isolation (STI) oxide and along its interfaces.

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO ₂ ) and then annealed for 24 h at 100 °C. Irradiated devices show significant degradation in transconductance and OFF-state leakage currents with slight subthreshold stretch-out and negligible threshold voltage shifts. At doses up to 10 Mrad(SiO ₂ ), the TID response is dominated by positive trapped charges in the shallow trench isolation (STI). At ultrahigh doses approaching 1 Grad(SiO ₂ ), dc static measurements suggest generation of trapped charge at the STI/Si interface and/or at the corner between the STI and the gate dielectric. The TID sensitivity depends on the bias condition and channel length. Halo implantations fortuitously increase the radiation tolerance of short-channel FinFETs due to the increased channel doping caused by the overlap of the source and the drain halos. The worst degradation is found when a high electric field is applied to the gate during irradiation.

In this work, the Total Ionizing Dose (TID) response of a commercial 28 nm high-k CMOS technology at ultra-high doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width, but also on the channel length. Short channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through Technology Computer-Aided Design simulations.