Power amplifier (PA) models, such as the neural network (NN) models and the multilayer NN models, have problems with high complexity. In this article, we first propose a novel behavior model for wideband PAs, using a real-valued time-delay convolutional NN (RVTDCNN). The input data of the model is sorted and arranged as a graph composed of the in-phase and quadrature ( $I/Q$ ) components and envelope-dependent terms of current and past signals. Then, we created a predesigned filter using the convolutional layer to extract the basis functions required for the PA forward or reverse modeling. Finally, the generated rich basis functions are input into a simple, fully connected layer to build the model. Due to the weight sharing characteristics of the convolutional model’s structure, the strong memory effect does not lead to a significant increase in the complexity of the model. Meanwhile, the extraction effect of the predesigned filter also reduces the training complexity of the model. The experimental results show that the performance of the RVTDCNN model is almost the same as the NN models and the multilayer NN models. Meanwhile, compared with the abovementioned models, the coefficient number and computational complexity of the RVTDCNN model are significantly reduced. This advantage is noticeable when the memory effects of the PA are increased by using wider signal bandwidths.

In this article, a continuous-mode inverse class GF (CCGF⁻¹) power amplifier is introduced based on a new closed-form expression for the drain current. This analytical expression is utilized to exploit second source harmonic impedance manipulation in order to expand the design space of the output matching circuit resistively. This approach allows to diminish the complexity of the design of the load matching network at the fundamental and harmonic frequencies and to achieve wider bandwidth while simultaneously improving drain efficiency across the new optimum admittance points. Using the nonlinear model of a commercially available 10-W gallium nitride (GaN) device, load--pull and source-pull techniques are used to design a wideband CCGF⁻¹. The designed amplifier is fabricated using the selected transistor in low-temperature co-fired ceramic (LTCC) technology. Measurement results show that, over the frequency band between 3.05 and 3.85 GHz, a drain efficiency of more than 70%, 11-12.4-dB gain, and 39.9-41.4-dBm output power at 3-dB gain compression have been achieved. Although not designed for linearity, the fabricated amplifier shows an adjacent channel power ratio better than 26 dBc under a 20-MHz long-term evolution (LTE) signal having a 10.45-dB peak-to-average power ratio.

In this paper, a novel planar compact coupled-line circuit is proposed to design a single-ended-to-balanced power divider (PD) that can be used in numerous balanced circuits and systems. By using the matrix transformation between the mixed-mode (MM) scattering parameters and the single-ended scattering parameters, the constraint rules are deduced to realize the performance of equal power division with in-phase, good input (output) port matching, high isolation between two balanced outputs, high suppression of the common-mode (CM) noise, as well as the mode-conversion suppression between differential-mode signals and CM noise. Then, the closed-form design equations are derived using the even- and odd-mode analysis. Finally, a microstrip PD, which works at 1 GHz, is designed and fabricated. The measured (simulated) operating relative bandwidth is 37% (38%) from 0.76 (0.83 GHz) to 1.13 GHz (1.21 GHz). The consistency between the simulated and measured MM scattering parameters verifies the correctness of the design theory.

This article presents a generalized theory and new design methodology for reverse-load-modulated dual-branch (RMDB) power amplifiers (PAs), which uses a current-biased transistor in the main branch to realize optimal load modulation without using the impedance transformers at the output of the PAs. Consequently, this topology offers a proper load modulation mechanism over a wider frequency bandwidth. Besides, smaller output matching network (OMN) footprint and lower loss are suitable features for monolithic microwave integrated circuit (MMIC) designs. The proposed theory can be applied for symmetrical and asymmetrical designs to realize different output power back-off (OPBO) ranges. The theory and design methodology were used to design the first MMIC RMDB PA. The broad bandwidth of this design (2.6-3.8 GHz) allows it to cover multiple bands in 4th-generation (4G) Long Term Evolution (LTE) and 5th-generation (5G) New Radio (NR) standards. Under continuous wave (CW) excitation, the experimental results show a drain efficiency (DE) higher than 58% at peak output power (POP) and 37% at 9 dB OPBO, over the whole frequency band.

In this paper, a novel triple-band monopole antenna with double coupled C-shaped strips for WLAN/WiMAX applications is presented. By adjusting the dimensions of the outer and inner C-shaped strips,...

In this paper, a parallel-circuit (PC) class-EF power amplifier (PA) with a shunt quarter-wave transmission-line for driving signals with arbitrary duty cycles is proposed and investigated. At the particular condition of duty cycle=1/3, the optimum values of the elements in the output network as well as some vital design parameters are analyzed and calculated. In this case, a series of remarkable improvements have been obtained, such as peak drain voltage (Vmax), maximum operating frequency (fmax) and power output capability (cp). To the best knowledge of the authors, in terms of Vmax, fmax and cp, the proposed structure is the best among the published works. At the non-ideal situations, three simulated results about the performance comparison between the proposed PA and other switch-mode PAs are also presented. Furthermore, in order to verify its feasibility, a practical circuit based on a transmission-line compensation topology is derived, designed and fabricated. Finally, at the operating frequency of 3.59 GHz, the excellent performance has been realized with the power-added efficiency (PAE) of 79.9% and output power of 40.7 dBm.