An aluminum nitride (AlN) piezoelectric micromachined ultrasound transducer (PMUT) array was proposed and fabricated for non-invasive radial artery stiffness monitoring, which could be employed in human vascular health monitoring applications. Using surface micromachining techniques, four hexagonal PMUT arrays were fabricated within a chip area of 3 × 3 mm². The mechanical displacement sensitivity and quality factor of a single PMUT were tested and found to be 24.47 nm/V at 5.94 MHz and 278 (in air), respectively. Underwater pulse-echo tests for the array demonstrated a −3 dB bandwidth of 0.76 MHz at 3.75 MHz and distance detection limit of approximately 25 mm. Using the PMUT array as an ultrasonic probe, the depth and diameter changes over cardiac cycles of the radial artery were measured to be approximately 3.8 mm and 0.23 mm, respectively. Combined with blood pressure calibration, the biomechanical parameters of the radial artery vessel were extracted using a one-dimensional vascular model. The cross-sectional distensibility, compliance, and stiffness index were determined to be 4.03 × 10⁻³/mmHg, 1.87 × 10⁻² mm²/mmHg, and 5.25, respectively, consistent with the newest medical research. The continuous beat-to-beat blood pressure was also estimated using this model. This work demonstrated the potential of miniaturized PMUT devices for human vascular medical ultrasound applications.

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.

This work proposes the piezoelectric micromachined ultrasonic transducer (pMUT) design using high-order mode. Analytical models are established and used to estimate the performance of pMUT in n ^th -order axisymmetric mode. To prove the concept, a comprehensive analysis is conducted on the 3 ^rd -order pMUT by finite element method (FEM). The analytical models give guidance for the design of electrode configuration and geometric dimensions, which are verified by FEM. With optimized electrode configuration and thickness, the proposed pMUT design shows extraordinary performance improvement in transmitting and round-trip sensitivity. Approximately 10.2× and 4.12× improvements in transmitting sensitivity and round-trip sensitivity have been achieved compared to the traditional 1 ^st -order pMUT in the same radius. Pulse-echo analysis shows 8.6× improvement of receiving voltage compare to 1 ^st -order pMUT with the same radius. The high frequency, round-trip sensitivity, and directivity features of the proposed high-order pMUT design shown in FEM make it very promising for forming a high-frequency large-scale pMUT array.

Piezoelectric micromachined ultrasound transducers (PMUTs) have gained significant popularity in the field of ultrasound ranging and medical imaging owing to their small size, low power consumption, and affordability. The scar-free “MIS” (micro-hole inter-etch and sealing) process, a novel bulk-silicon manufacturing technique, has been successfully developed for the fabrication of pressure sensors, flow sensors, and accelerometers. In this study, we utilize the MIS process to fabricate cavity diaphragm structures for PMUTs, resulting in the formation of a flat cavity diaphragm structure through anisotropic etching of (111) wafers in a 70 °C tetramethylammonium hydroxide (TMAH) solution. This study investigates the corrosion characteristics of the MIS technology on (111) silicon wafers, arranges micro-pores etched on bulk silicon around the desired cavity structure in a regular pattern, and takes into consideration the distance compensation for lateral corrosion, resulting in a fully connected cavity structure closely approximating an ortho-hexagonal shape. By utilizing a sputtering process to deposit metallic molybdenum as upper and lower electrodes, as well as piezoelectric materials above the cavity structure, we have successfully fabricated aluminum nitride (AlN) piezoelectric ultrasonic transducer arrays of various sizes and structures. The final hexagonal PMUT cells of various sizes that were fabricated achieved a maximum quality factor (Q) of 251 and a displacement sensitivity of 18.49 nm/V across a range of resonant frequencies from 6.28 MHz to 11.99 MHz. This fabrication design facilitates the achievement of IC-compatible and cost-effective mass production of PMUT array devices with high resonance frequencies.