An aluminum nitride (AlN) piezoelectric micromachined ultrasound transducer (PMUT) array was proposed and fabricated for non-invasive radial artery stiffness monitoring, which could be employed in human vascular health monitoring applications. Using surface micromachining techniques, four hexagonal PMUT arrays were fabricated within a chip area of 3 × 3 mm². The mechanical displacement sensitivity and quality factor of a single PMUT were tested and found to be 24.47 nm/V at 5.94 MHz and 278 (in air), respectively. Underwater pulse-echo tests for the array demonstrated a −3 dB bandwidth of 0.76 MHz at 3.75 MHz and distance detection limit of approximately 25 mm. Using the PMUT array as an ultrasonic probe, the depth and diameter changes over cardiac cycles of the radial artery were measured to be approximately 3.8 mm and 0.23 mm, respectively. Combined with blood pressure calibration, the biomechanical parameters of the radial artery vessel were extracted using a one-dimensional vascular model. The cross-sectional distensibility, compliance, and stiffness index were determined to be 4.03 × 10⁻³/mmHg, 1.87 × 10⁻² mm²/mmHg, and 5.25, respectively, consistent with the newest medical research. The continuous beat-to-beat blood pressure was also estimated using this model. This work demonstrated the potential of miniaturized PMUT devices for human vascular medical ultrasound applications.

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam–island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches.

A miniaturized thrombus dredger is proposed and developed in this study. The flexural resonance of the µ-resonator dredger is driven by a bulk-extensional magneto-elastic vibrator that is externally excited by alternating magnetic-field. With the fabricated prototype of the resonant dredger, a mice thrombus blocked in a simulated vessel is broken into micro-pieces, and the previously blocked vessel can recover to an unobstructed state within 1 h. A flow-rate ratio detection method is used to evaluate the thrombus-cleaning effectiveness. The comparison between the finite-element simulation and the experimental results validates the flow-rate ratio detection method. By optimally exciting the resonant dredger in its third resonant mode, the flow-rate ratio in the cleaned vessel increases by about 2.7 times compared with that in the partly blocked vessel, and the thrombus is smashed into micro-pieces.