Chenkai Hu

Mr. Chenkai Hu

orcid

Research Focus & Metrics

Academic Career Length

5Years (2022-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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4 October 2022 in Micromachines
Verified
Journal Article
Open access
PDF file
CHChenkai Hu
Chenkai Hu
ZCZhizhi Chen
Zhizhi Chen
SNShenglan Ni
Shenglan Ni
QWQian Wang
Qian Wang
XLXi Li
Xi Li
ZSZhitang Song
Zhitang Song
A fully integrated low-dropout (LDO) regulator with improved load regulation and transient responses in 40 nm technology is presented in this paper. Combining adjustable threshold push–pull stage (ATPS) and master–slave power transistors topology, the proposed LDO maintains a three-stage structure within the full load range. The proposed structure ensures the steady-state performance of LDO and achieves 0.017 mV/mA load regulation. The ATPS consumes little quiescent current at light load current condition, and the turn-on threshold of the ATPS can be adjusted by a current source. Once the value of current source is set, the turn-on threshold is also determined. A benefit of the proposed structure is that the LDO can be stable from 0 to 100 mA load current with a maximum 100 pF parasitic load capacitance and a 0.7 pF compensation capacitor. It also shows good figure of merit (FOM) without an extra transient enhanced circuit. For the maximum 100 mA load transient with 100 ns edge time, the undershoot and overshoot are less than 33 mV. The dropout voltage of the regulator is 200 mV with input voltage of 1.1 V. The total current consumption of the LDO was 24.6 μA at no load.

25 September 2022 in Micromachines
Verified
Journal Article
Open access
PDF file
SNShenglan Ni
Shenglan Ni
ZCZhizhi Chen
Zhizhi Chen
CHChenkai Hu
Chenkai Hu
HCHoupeng Chen
Houpeng Chen
QWQian Wang
Qian Wang
ZSZhitang Song
Zhitang Song
A novel output-capacitorless low-dropout regulator (OCL-LDO) with an embedded slew-rate-enhancement (SRE) circuit is presented in this paper. The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power transistor when a large voltage spike at the output is detected. In addition, a feed-forward transconductance cell is introduced to form a push–pull output structure with the power transistor. The simulation results show that the maximum transient output voltage variation is 23.5 mV when the load current ILOAD is stepped from 0 to 100 mA in 100 ns with a load capacitance of 100 pF, and the settling time is 1.2 μs. The proposed OCL-LDO consumes a quiescent current of 30 μA and has a dropout voltage of 200 mV for the maximum output current of 100 mA.

22 August 2022
Verified
Preprint
Open access
PDF file
CHChenkai Hu
Chenkai Hu
ZCZhizhi Chen
Zhizhi Chen
SNShenglan Ni
Shenglan Ni
QWQian Wang
Qian Wang
XLXi Li
Xi Li
ZSZhitang Song
Zhitang Song
A fast-transient output-capacitorless (OCL) low-dropout (LDO) regulator with adjustable threshold push–pull stage (ATPS) and master-slave power transistors topology is presented in this paper. The ATPS consumes little quiescent current at light load current condition and the turn on threshold of the proposed ATPS can be adjusted by a current source. With the ATPS and master-slave power transistor topology, the proposed LDO can be stable from 0 to 100 mA load current at a maximum 100 pF parasitic load capacitance and a 0.7 pF compensation capacitor. It shows good figure of merit (FOM) without extra transient enhanced circuit. For the maximum 100 mA load transient with 100 ns edge time, the undershoot and overshoot are less than 33 mv.