Dr. Emmanuel Bender received
his Ph.D. degree in electrical and electronics engineering from Ariel
University, Ariel, Israel, in 2022. He specializes in statistical
failure analysis of silicon VLSI technologies, including 16 nm FinFETs. His
work focuses on failure phenomena in packaged devices, including bias
temperature instability, electromigration, hot carrier instability, and the
self-heating effect. He is currently working as a Postdoctoral Researcher with
Ariel University and has a research affiliation with the Microsystems
Technology Laboratory, MIT, with a primary focus on advanced packaging device
failure analysis.
Dr. Emmanuel Bender received
his Ph.D. degree in electrical and electronics engineering from Ariel
University, Ariel, Israel, in 2022. He specializes in statistical
failure analysis of silicon VLSI technologies, including 16 nm FinFETs. His
work focuses on failure phenomena in packaged devices, including bias
temperature instability, electromigration, hot carrier instability, and the
self-heating effect. He is currently working as a Postdoctoral Researcher with
Ariel University and has a research affiliation with the Microsystems
Technology Laboratory, MIT, with a primary focus on advanced packaging device
failure analysis.