The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.

Telluriums (Te) with various nanostructures, including particles, wires, and sheets, are controllably synthesized by adjusting the content of polyvinylpyrrolidone (PVP) in a facile solvothermal reaction. Te nanostructures all have complete grain sizes with excellent crystallinity and mesopore structures. Further, the formation mechanisms of Te nanostructures are proposed to be that the primary nuclei of Te are released from the reduction of TeO₃²⁻ using N₂H₄·H₂O, and then grow into various nanostructures depending on the different content of PVP. These nanostructures of Te all exhibit the photocatalytic activities for the degradation of MB and H₂ production under visible light irradiation, especially Te nanosheets, which have the highest efficiencies of degradation (99.8%) and mineralization (65.5%) at 120 min. In addition, compared with pure Te nanosheets, the rate of H₂ production increases from 412 to 795 μmol∙h⁻¹∙g⁻¹ after the introduction of Pt, which increases the output by nearly two times. The above investigations indicate that Te with various nanostructures is a potential photocatalyst in the field of degradation of organic pollutants and H₂ fuel cells.

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn²⁺ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μ_SAT) up to 12.64 cm²V⁻¹s⁻¹, a threshold voltage (V_TH) of −6.61 V, a large on/off current ratio (I_on/I_off) of 1.87 × 10⁹, and an excellent subthreshold swing (SS) of 0.79 V/Decade.

A Cu(OH)₂/Ni₃S₂ composite has been designed and in situ constructed on Cu foam substrate by facile two-step electrodeposition. Cu(OH)₂ is achieved on Cu foam by galvanostatic electrodeposition, and the subsequent coating of Ni₃S₂ is realized by cyclic voltammetric (CV) electrodeposition. The introduction of Cu(OH)₂ provides skeleton support and a large specific surface area for the Ni₃S₂ electrodeposition. Benefiting from the selection of different components and preparation technology, the Cu(OH)₂/Ni₃S₂ composite exhibits enhanced electrochemical properties with a high specific capacitance of 4.85 F cm⁻² at 2 mA cm⁻² and long-term cyclic stability at 80.84% (4000 cycles).

For humans exposed to electromagnetic fields, metal medical implants pose more safety issues. The objective of this article is to analyze the safety issues of human electromagnetic exposure containing implants in the electric vehicle wireless power transfer (EV- WPT). This article establishes an adult male human model with a coronary artery stent and hip joint implant and is exposed to the leakage magnetic field of an EV -WPT system. The EV-WPT system has a transmission power of 30kW and a working frequency of 85kHz. Fully considering the uncertainty of human exposure to the electromagnetic environment of the EV-WPT system, such as the distance between the human body and the EV-WPT system, the distance between the EV-WPT system coils, and the parameters of the compensation circuit, this article uses Bayesian Neural Networks to evaluate human electromagnetic safety. Bayesian neural networks can obtain accurate results with fewer training sets and have higher computational efficiency. The results showed that the probability of electromagnetic exposure levels significantly exceeding the standard limit in the human body with hip joint implants was almost 100%, while the probability of exceeding the standard limit in the human heart with coronary artery stents did not exceed 31.5%. Patients with medical implants may need to limit power when using the EV-WPT system.

Developing efficient catalysts to produce clean fuel by using solar energy has long been the goal to mitigate the issue of traditional fossil fuel scarcity. In this work, we design a heterostructure photocatalyst by employing two green components, Ni(OH)₂ and ZnIn₂S₄, for efficient photocatalytic H₂ evolution under the illumination of visible light. After optimization, the obtained photocatalyst exhibits an H₂ evolution rate at 0.52 mL h⁻¹ (5 mg) (i.e., 4640 μmol h⁻¹ g⁻¹) under visible light illumination. Further investigations reveal that such superior activity is originated from the efficient charge separation due to the two-dimensional (2D) structure of ZnIn₂S₄ and existing high-quality heterojunction.