Perovskite quantum dots (PVK QDs) are gaining significant attention as potential materials for next-generation memory devices leveraged by their ion dynamics, quantum confinement, optoelectronic synergy, bandgap tunability, and solution-processable fabrication. In this review paper, we explore the fundamental characteristics of organic/inorganic halide PVK QDs and their role in resistive switching memory architectures. We provide an overview of halide PVK QDs synthesis techniques, switching mechanisms, and recent advancements in memristive applications. Special emphasis is placed on the ionic migration and charge trapping phenomena governing resistive switching, along with the prospects of photonic memory devices that leverage the intrinsic photosensitivity of PVK QDs. Despite their advantages, challenges such as stability, scalability, and environmental concerns remain critical hurdles. We conclude this review with insights into potential strategies for enhancing the reliability and commercial viability of PVK QD-based memory technologies.

An asymmetric memristive device fabricated with a titania (TiO_x)-based switching layer deposited through atomic layer deposition with a thickness of ∼37 nm was investigated. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy coupled with energy-dispersive x-ray spectroscopy were employed for device structural characterization. A unipolar resistive switching behavior (both at positive and negative voltages) was observed through the memristor’s current–voltage characteristics. A remarkably smaller forming voltage (from the top Pt electrode to the grounded Au electrode) of 0.46 V was achieved, while it approached (positive bias from the Au electrode and holding Pt electrode as grounded) 0.25 V, which is a much smaller forming voltage than has ever been reported for titanium-based oxides without doping. The retention and endurance characterization over 2000 switching cycles were satisfactory without degradation.

This paper introduces a novel compact memristor model that encompasses various phenomena such as linear and nonlinear dopant drifts, exponential drifts of dopants in high electric fields, asymmetry in the on and off switching, and threshold effects. This model simplifies its structure by eliminating the window function and integrating its functionality through varactor-based integrators, thus avoiding convergence issues caused by the feedback loop within the conventional models. It demonstrates improved accuracy compared to previously proposed models, achieving more than 10% accuracy improvement compared to other models for some devices (e.g., reducing error from 15.2% to 4.3%). In addition, experimentation was conducted on a commercially procured memristor, where the model was aligned with the obtained test outcomes. Subsequently, a TiO₂ device was fabricated, and the model was correspondingly adjusted to align with the outcomes from its tests. Experimental results show that the model achieves 98% accuracy in modeling the commercially available device and 97% in modeling the fabricated device.