This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

Patterning of colloidal quantum dots (QDs) is essential for realizing high‐resolution, high‐brightness, full‐color quantum dot light‐emitting diodes (QLEDs) and QD color‐conversion layers for near‐eye microdisplays in augmented and virtual reality systems. However, the reliably producing uniform nanoscale QD patterns and practical full‐color QLEDs remains a significant challenge. Here, we report a multi‐functional electrophoretic deposition (MEPD) strategy that enables selective, sequential, and high‐throughput patterning of nanoscale QD patterns. Using ligand‐engineered, negatively charged QDs, MEPD forms 435 600 sub‐pixels with only 3 V applied for 15 s. The same solution chemistry and low‐voltage conditions enable multi‐color patterns across feature sizes ranging from tens of micrometers down to 500 nm, demonstrating constant process complexity independent of pixel dimensions. Moreover, sequential MEPD of ZnO nanoparticles and QDs produces full‐color QLEDs featuring a pixel‐isolated electron transport layer, lateral currents in the tens of nanoamperes, and enhanced efficiencies. These results establish a scalable and manufacturing‐compatible route toward next‐generation ultra‐high‐resolution display.

Quantum dot light-emitting diodes (QLEDs) with high form factor are attracting great attention owing to the superb optoelectrical properties of quantum dots (QDs) and their ubiquitous application, such as wearable displays. However, there have been significant challenges in increasing the brightness of flexible QLEDs due to the inferior thermal conductivity of conventional flexible substrates. In this work, we demonstrate bright, flexible, and waterproof top-emitting QLEDs based on InP/ZnSe/ZnS QDs, which are promising for human-interfaced wearable displays. We adopted an Al foil substrate with high thermal conductivity, which can quickly dissipate the Joule heat generated at high current densities, and a Parylene C/SU-8 bilayer thin-film on both sides of the QLEDs to ensure the surface planarization and to prevent moisture permeation. As a result, the flexible QLED works well even when bent or in contact with water with a maximum luminance of ∼40000 cd/m ² . We believe that our device design strategies can contribute to the development of next-generation flexible optoelectronics.