To achieve a simplified method instead of resin-induced post-treatment, 2-hydroxyethyl methacrylate, a component of the resin, was pre-mixed with ZnMgO nanoparticles, leading to enhanced efficiency and lifetime.

This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

Colloidal quantum dots are promising emitters for quantum dot light-emitting diodes (QLEDs), driving the development of optical strategies to enhance light outcoupling. In top-emitting architectures, capping layers (CPLs) enable precise microcavity control; however, conventional CPLs are typically vacuum-deposited, increasing fabrication complexity. Here, we demonstrate a solution-processed ZnS nanoparticle CPL that forms conformal films, enabling well-defined microcavity interference. Red, green, and blue (RGB) top-emitting QLEDs incorporating ZnS CPLs are systematically optimized, showing strong agreement with optical simulations. As a result, the devices achieve 2.08-, 1.52-, and 1.66-fold enhancements in external quantum efficiency for RGB QLEDs, along with improved angular color stability.

Indium phosphide (InP)‐based quantum dots (QDs) are cadmium (Cd)‐free emitters for display applications, but their operational stability is limited by surface defects and imbalanced carrier injection. Here, we introduce a [2‐(9H‐carbazol‐9‐yl)ethyl]phosphonic acid (2PACz)‐mediated surface modification strategy for efficient and stable quantum dot light‐emitting diodes (QLEDs). 2PACz forms a mixed‐ligand surface by partially replacing native oleic acid ligands and binding to under‐coordinated surface sites, thereby reducing trap‐assisted nonradiative recombination. In parallel, 2PACz‐mediated energy‐level modulation facilitates hole injection and suppresses excessive electron injection, improving carrier balance in inverted red InP‐based QLEDs. The resulting devices achieved a peak external quantum efficiency of 23.7% and an extrapolated half‐lifetime of 217.8 h at an initial luminance of 1000 cd m ⁻² . Transient and chemical analyses reveal that 2PACz treatment stabilizes carrier dynamics and suppresses interfacial degradation under electrical stress. This work shows that surface ligand design can improve operational stability of Cd‐free QLEDs by coupling QD surface passivation with carrier balance control.