Fabian Khateb

Prof. Fabian Khateb

Department of Microelectronics, Brno University of Technology, Brno, Jihomoravský Kraj, Czech Republic
orcid

Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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30 January 2020 in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Verified
Journal Article
Closed access
NRNiranjan Raj
Niranjan Raj
RRRajeev Kumar Ranjan
Rajeev Kumar Ranjan
Fabian KhatebFabian Khateb
Fabian Khateb
A flux-controlled memristor emulator built with off-the-shelf electronic devices and based on a TiO₂ model is presented in this article. The circuit proposed in this article uses the current mode approach based analog building blocks such as a second-generation current conveyor (CCII) and an operational transconductance amplifier (OTA) as an active element with few passive elements. The circuit shows a clear fingerprint of an ideal memristor. The offered emulator circuit can be made to operate in incremental and decremental modes and functions well up to 26.3 MHz. Nonvolatility, Monte Carlo sampling, and corner analysis simulations are executed to verify the robustness of the circuit. The functional verification of the presented circuit is performed using the 0.18-μm CMOS parameter at a supply voltage of ±1.2 V. The experimental demonstration is carried out by making a prototype on a breadboard using ICs AD844AN and CA3080, which exhibits a good agreement with theoretical and simulation results. The layout of the circuit, which requires a total chip area of 75 x 70 μm², is also created. Single/parallel combinations of a memristor, a high-pass filter, and a chaotic system are presented to demonstrate its application.

1 December 2017 in AEU - International Journal of Electronics and Communications
Verified
Journal Article
Closed access
RRRajeev Kumar Ranjan
Rajeev Kumar Ranjan
NRNiranjan Raj
Niranjan Raj
NBNidhi Bhuwal
Nidhi Bhuwal
Fabian KhatebFabian Khateb
Fabian Khateb

13 September 2019 in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Verified
Journal Article
Closed access
TKTomasz Kulej
Tomasz Kulej
Fabian KhatebFabian Khateb
Fabian Khateb
In this article, a new solution for an ultralow-voltage (ULV) ultralow-power (ULP) operational transconductance amplifier (OTA) is presented. Thanks to the combination of a low-voltage bulk-driven nontailed differential stage with the multipath Miller zero compensation technique, a simple class AB power-efficient ULV structure has been obtained, which can operate from supply voltages less than the threshold voltages of the employed MOS transistors, while offering rail-to-rail input common-mode range at the same time. The proposed OTA was fabricated using the 180-nm CMOS process from Taiwan Semiconductor Manufacturing Company (TSMC) and can operate from VDD ranging from 0.3 to 0.5 V. The 0.3-V version dissipates only 12.6 nW of power while showing a 64.7-dB voltage gain at 1-Hz, 2.96-kHz gain-bandwidth product, and a 4.15-V/ms average slew-rate at 30-pF load capacitance. The measured results agree well with simulations.

25 March 2018 in International Journal of Circuit Theory and Applications
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Journal Article
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TKTomasz Kulej
Tomasz Kulej
Fabian KhatebFabian Khateb
Fabian Khateb

6 February 2020 in IEEE Access
Verified
Journal Article
Open access
TKTomasz Kulej
Tomasz Kulej
Fabian KhatebFabian Khateb
Fabian Khateb
A new solution for an ultra-low-voltage, ultra-low-power operational transconductance amplifier (OTA) is presented in the paper. The design exploits a three-stage structure with a Reversed Miller Compensation Scheme, where the input stage is based on a non-tailed bulk-driven differential pair. Optimization of the structure for very low supply voltage is discussed. The resulting amplifier outperforms other ultra-low-voltage OTAs in terms of a DC voltage gain and power efficiency, expressed by standard figures of merit. Experimental verification using a 0.18μm CMOS technology, with supply voltage of 0.3-V, showed a dissipation power of 13 nW, a DC voltage gain of 98 dB, a gain-bandwidth product of 3.1 kHz and an average slew-rate of 9.1 V/ms at 30 pF load capacitance. The experimental results agree well with simulations.

1 January 2014 in AEU - International Journal of Electronics and Communications
Verified
Journal Article
Closed access
Fabian KhatebFabian Khateb
Fabian Khateb