We propose and experimentally demonstrate a temporal differentiator in optical field based on a silicon microring resonator with a radius of 40 µm. The microring resonator operates near the critical coupling region, and can take the first order derivative of the optical field. It features compact size thus is suitable for integration with silicon-on-insulator (SOI) based optical and electronic devices. The performance of this optical differentiator is tested using signals with typical shapes such as Gaussian, sinusoidal and square-like pulses at data rates of 10 Gb/s and 5 Gb/s.

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

Mode-division multiplexing on an integrated photonic chip is critical for future optical networks. High-order mode multiplexing is desired to increase the transmission capacity. Here we propose and experimentally demonstrate a silicon on-chip high-order mode (de)multiplexer using subwavelength grating (SWG) structure, which supports 11-mode (de)multiplexing on a TE-polarized light ( $\rm TE_0 \sim TE_{10}$ ). The proposed mode (de)multiplexer comprises three directional couplers and seven SWG-based directional couplers. Measurement results show that all the 11 channels have low crosstalk values (-15.4 dB ~ -26.4 dB) and low insertion losses (0.1 dB ~ 2.6 dB) at 1545 nm. To the best of our knowledge, our device achieves the highest-order-mode (de)multiplexing on a silicon photonic chip.

Virtual reality (VR) and augmented reality (AR) have found widespread applications in education, engineering, healthcare, and entertainment. However, these near-eye displays are often bulky and heavy, and thus are not suitable for long-term wearing. Metalenses, with an ultra-thin formfactor, subwavelength modulation scale, and high modulation flexibility, are promising candidates to replace the conventional optics in AR display systems. In this work, we proposed and fabricated a novel reflective dielectric metalens-visor based on Pancharatnam-Berry phase with see-through capability. It achieves diffraction-limited focusing behavior for the reflected red light, while keeping a good transmission spectrum in the visible region. Hence, this single piece metalens-visor can perform the function of two integrated elements simultaneously: an eyepiece and an optical combiner, which in turn greatly reduces the weight and the size of an AR display. We have implemented a proof-of-concept AR display system employing the metalens-visor, and experimentally demonstrated color AR images with good image quality. This work reveals the great potential of multi-functional metasurface devices which enables optical integration in interdisciplinary applications including wearable displays, biological imaging, and aeronautic optical instruments.