Ferrimagnets, such as , can produce ultrafast magnetic switching and oscillation due to the strong exchange field. The two-sublattice macrospin model has been widely used to explain the experimental results. However, it fails in describing the spatially nonuniform magnetic dynamics which gives rises to many important phenomena such as domain walls and skyrmions. Here we develop a two-dimensional atomistic model and provide a torque analysis method to study the ferrimagnetic oscillation. Under spin-transfer torque, the magnetization oscillates in the exchange mode or the flipped exchange mode. When the Gd composition is increased, the exchange mode first disappears, and then appears again as the magnetization compensation point is reached. We show that these results can only be explained by analyzing the spatial distribution of magnetization and effective fields. In particular, when the sample is small, a spatially nonuniform oscillation is also observed in the square film. Our work reveals the importance of spatial magnetic distributions in understanding the ferrimagnetic dynamics. The method developed in this paper provides an important tool to gain a deeper understanding of ferrimagnets and antiferromagnets. The observed ultrafast dynamics can also stimulate the development of THz oscillators.
The field-free spin–orbit torque induced 180° reorientation of magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide a higher operation speed than the ferromagnetic counterpart. In this paper, we propose a trilayer AFM/insulator/heavy metal structure as the AFM memory device. We show that the field-free switching of the AFM with a perpendicular Néel vector can be achieved by using two orthogonal currents, which provide a uniform damping-like torque and uniform field-like torque, respectively. The reversible switching can be obtained by reversing either current. A current density of 1.79 × 1011 A/m2 is sufficient to induce the switching. In addition, the two magnetic moments become noncollinear during switching. This enables an ultrafast switching within 40 ps. The device and switching mechanism proposed in this work offer a promising approach to deterministically switch the AFM with the perpendicular Néel vector. It can also stimulate the development of an ultrafast AFM-based MRAM.
The writing performance of the easy-cone magnetic tunnel junction (MTJ) and perpendicularly magnetized MTJ (pMTJ) under various temperatures was investigated based on the macrospin model. When the temperature is changed from 273 K to 373 K, the switching current density of the pMTJ changes by 56%, whereas this value is only 8% in the easy-cone MTJ. Similarly, the temperature-induced variation of the switching delay is more significant in the pMTJ. This indicates that the easy-cone MTJ has a more stable writing performance under temperature variations, resulting in a wider operating temperature range. In addition, these two types of MTJs exhibit opposite temperature dependence in the current overdrive and write error rate. In the easy cone MTJ, these two performance metrics will reduce as temperature is increased. The results shown in this work demonstrate that the easy-cone MTJ is more suitable to work at high temperatures compared with the pMTJ. Our work provides a guidance for the design of STT-MRAM that is required to operate at high temperatures.
The dynamics of a spin torque-driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate ultrafast switching in the picosecond range. However, we find that the excessive current leads to magnetic oscillation. Therefore, faster switching cannot be achieved by unlimitedly increasing the current. By systematically studying the impact of thermal fluctuations, we find that the dynamics of FiMs can also be distinguished into the precessional region, the thermally activated region, and the crossover region. However, in the precessional region, there is a significant deviation between FiM and ferromagnet (FM), i.e., the FM is insensitive to thermal fluctuations since its switching is only determined by the amount of net charge. In contrast, we find that the thermal effect is pronounced even when a very short current pulse is applied to the FiM. We attribute this anomalous effect to the complex relation between the anisotropy and overdrive current. By controlling the magnetic anisotropy, we demonstrate that the FiM can also be configured to be insensitive to thermal fluctuations. This controllable thermal property makes the FiM promising in many emerging applications such as the implementation of tunable activation functions in the neuromorphic computing.