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Insulated-gate bipolar transistors (IGBTs) always operate in parallel for a large output current in modern high-power converter design. Suppressing dynamic current imbalance of the paralleled IGBTs is crucial for stable operation of converters. Though dynamic current imbalance could be suppressed by the symmetrical power loop design and consistent control signal, there is an inherent parameter difference in the power loop or gate circuit caused by the practical factors such as materials, physical dimensions and installation methods. The inherent difference could be compensated with gate delay control in a certain degree. The voltage and current in the key dynamic phases of IGBT are analyzed to obtain the delay compensation in gate delay control. An asynchronous gate signal driving method based on reference signal selections is proposed to suppress dynamic imbalance of collector current from parallel connected IGBTs, and the implementation of the asynchronous drive is described in brief. By using simulation software, the delay settings and dynamic current imbalance under different parameters discrepancy of drive circuit are obtained. The delay difference from key dynamic phases is calculated as the compensation for balanced dynamic current sharing under two selections of reference signals. Furthermore, the dynamic current distribution in the turn-on and turn-off phases is compensated by the asynchronous drive control. The optimization of asynchronous drive method on dynamic current sharing of paralleled IGBTs is verified by comparing dynamic current imbalance between the system with compensation and the system without compensation.
Xianjin Huang; Feng Mu; Yixin Liu; Yuhan Wu; Hu Sun. Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference. IEEE Access 2021, 9, 1 -1.
AMA StyleXianjin Huang, Feng Mu, Yixin Liu, Yuhan Wu, Hu Sun. Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference. IEEE Access. 2021; 9 ():1-1.
Chicago/Turabian StyleXianjin Huang; Feng Mu; Yixin Liu; Yuhan Wu; Hu Sun. 2021. "Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference." IEEE Access 9, no. : 1-1.
Insulated gate bipolar transistors (IGBT) short‐circuit (SC) protection is one of the most important protection methods for IGBT converter equipment. The fast detection and protection response time could reduce the permanent damage of devices, and extend their use life cycle. At present, the collector emitter voltage vce desaturation method is widely used in the commercial IGBT drive circuit, which has blanking time of fault detection and protection. In this paper, an improved adaptive vce SC detection and protection is proposed to realize the blanking time adjustment under different SC conditions. By the determination of the di/dt characteristics of the current variation on the parasitic inductance between the power emitter and the Kelvin emitter of IGBT modules, the execution time of the two detection methods can be set. According to the switch process and the SC type, the corresponding logic processing will be carried out to realize the fast detection of different SC conditions. The circuit scheme without blanking time detection and protection is designed, and the circuit is modelled and simulated by Pspice. The IGBT driving circuit SC test without blanking time detection and soft turn‐off protection has been carried out. Simulation and test results can verify the feasibility of the proposed circuit.
Xianjin Huang; Xin Li; FengChuan Wang; Yixin Liu; Hu Sun. Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors. IET Power Electronics 2021, 14, 1138 -1148.
AMA StyleXianjin Huang, Xin Li, FengChuan Wang, Yixin Liu, Hu Sun. Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors. IET Power Electronics. 2021; 14 (6):1138-1148.
Chicago/Turabian StyleXianjin Huang; Xin Li; FengChuan Wang; Yixin Liu; Hu Sun. 2021. "Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors." IET Power Electronics 14, no. 6: 1138-1148.
Juan Wei; Fei Lin; Zhongping Yang; Xianjin Huang; Chanjuan Xiao; Hao Zhang; Wencai Liang. PSpice Modeling and Application for SiC Power MOSFET to Evaluate the Power Loss in Full-Bridge Converter. 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) 2018, 1 .
AMA StyleJuan Wei, Fei Lin, Zhongping Yang, Xianjin Huang, Chanjuan Xiao, Hao Zhang, Wencai Liang. PSpice Modeling and Application for SiC Power MOSFET to Evaluate the Power Loss in Full-Bridge Converter. 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia). 2018; ():1.
Chicago/Turabian StyleJuan Wei; Fei Lin; Zhongping Yang; Xianjin Huang; Chanjuan Xiao; Hao Zhang; Wencai Liang. 2018. "PSpice Modeling and Application for SiC Power MOSFET to Evaluate the Power Loss in Full-Bridge Converter." 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) , no. : 1.
Xianjin Huang; Juan Zhao; Fei Lin. The Loss Characteristics of PSFB ZVS DC-DC Converter Applied to the Auxiliary Power System. 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) 2018, 1 .
AMA StyleXianjin Huang, Juan Zhao, Fei Lin. The Loss Characteristics of PSFB ZVS DC-DC Converter Applied to the Auxiliary Power System. 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia). 2018; ():1.
Chicago/Turabian StyleXianjin Huang; Juan Zhao; Fei Lin. 2018. "The Loss Characteristics of PSFB ZVS DC-DC Converter Applied to the Auxiliary Power System." 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) , no. : 1.
Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s) derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.
Hao Liu; Xianjin Huang; Fei Lin; Zhongping Yang. Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device. Energies 2017, 10, 2018 .
AMA StyleHao Liu, Xianjin Huang, Fei Lin, Zhongping Yang. Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device. Energies. 2017; 10 (12):2018.
Chicago/Turabian StyleHao Liu; Xianjin Huang; Fei Lin; Zhongping Yang. 2017. "Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device." Energies 10, no. 12: 2018.
In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability. When compared with the conventional insulated gate bipolar transistor (IGBT) module, the Reverse Conducting-Insulated Gate Bipolar Transistor (RC-IGBT) with the same package has a lower thermal resistance and higher current tolerance. By applying the gate desaturation control, the reverse recovery loss of the RC-IGBT diode may be reduced. In this paper, a loss threshold desaturation control method is studied to improve the output characteristics of the single-phase PWM converter with a low switching frequency. The gate desaturation control characteristics of the RC-IGBT’s diode are studied. A proper current limit is set to avoid the ineffective infliction of the desaturation pulse, while the bridge arm current crosses zero. The expectation of optimized loss decrease is obtained, and the better performance for the RC-IGBTs of the single-phase PWM converter is achieved through the optimized desaturation pulse distribution. Finally, the improved predictive current control algorithm that is applied to the PWM converter with RC-IGBTs is simulated, and is operated and tested on the scaled reduced power platform. The results prove that the gate desaturation control with the improved predictive current algorithm may effectively improve the RC-IGBT’s characteristics, and realize the stable output of the PWM converter.
Xianjin Huang; Dengwei Chang; Chao Ling; Trillion Q. Zheng. Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control. Energies 2017, 10, 1845 .
AMA StyleXianjin Huang, Dengwei Chang, Chao Ling, Trillion Q. Zheng. Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control. Energies. 2017; 10 (11):1845.
Chicago/Turabian StyleXianjin Huang; Dengwei Chang; Chao Ling; Trillion Q. Zheng. 2017. "Research on Single-Phase PWM Converter with Reverse Conducting IGBT Based on Loss Threshold Desaturation Control." Energies 10, no. 11: 1845.
6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density. Reverse Conducting IGBT (RC-IGBT) constructs the conventional IGBT function and freewheel diode function in a single chip, which has a greater flow ability in the same package volume. In the same cooling conditions, RC-IGBT allows for a higher operating temperature. In this paper, a mathematic model is developed, referring to the datasheets and measurement data, to study the 6.5 kV/1000 A RC-IGBT switching features. The relationship among the gate desaturated pulse, conducting losses, and recovery losses is discussed. Simulations and tests were carried out to consider the influence of total losses on the different amplitudes and durations of the desaturated pulse. The RC-IGBT traction converter system with gate pulse desaturated control is built, and the simulation and measurements show that the total losses of RC-IGBT with desaturated control decreased comparing to the RC-IGBT without desaturated control or conventional IGBT. Finally, a proportional small power platform is developed, and the test results prove the correction of the theory analysis.
Xianjin Huang; Chao Ling; Dengwei Chang; Xiaojie You; Trillion Q. Zheng. Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter. Energies 2017, 10, 891 .
AMA StyleXianjin Huang, Chao Ling, Dengwei Chang, Xiaojie You, Trillion Q. Zheng. Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter. Energies. 2017; 10 (7):891.
Chicago/Turabian StyleXianjin Huang; Chao Ling; Dengwei Chang; Xiaojie You; Trillion Q. Zheng. 2017. "Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter." Energies 10, no. 7: 891.
By analyzing the traction technologies used in existing locomotives and high speed trains, the development and current situation of traction technology were described, and some urgent problems which need to be solved were presented. Firstly DC motor traction technologies used in Chinese railway were introduced, the development process of DC to AC motor traction locomotives were summarized. Secondly several types of CRH (China Railway High-speed) high speed trains had been compared from the various technical aspects such as main circuit structures, MT ratio, DC link loop. Finally, some studies which should be carried out for the future are presented.
Zhongping Yang; Xianjin Huang; Songrong Wu; Huishui Peng. Traction technology for Chinese railways. The 2010 International Power Electronics Conference - ECCE ASIA - 2010, 2842 -2848.
AMA StyleZhongping Yang, Xianjin Huang, Songrong Wu, Huishui Peng. Traction technology for Chinese railways. The 2010 International Power Electronics Conference - ECCE ASIA -. 2010; ():2842-2848.
Chicago/Turabian StyleZhongping Yang; Xianjin Huang; Songrong Wu; Huishui Peng. 2010. "Traction technology for Chinese railways." The 2010 International Power Electronics Conference - ECCE ASIA - , no. : 2842-2848.