Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH₄-H₂-N₂ gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD) superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa) within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

Thermal conductivity $\kappa (T)$ of single-crystal CVD diamond lightly doped (about 3 ppm) with nitrogen has been measured at temperatures from 5.7 to 410 K. The sample was carefully characterized by optical absorption and photoluminescence spectroscopy for the presence of impurities. Nine different optically active defects related with nitrogen, hydrogen, and silicon impurities have been identified and quantified. This pink-tint crystal showed a high thermal conductivity of $24.0\pm 0.5$ W cm${}^{-1}$ K${}^{-1}$ at room temperature, which is very close to the highest value ever measured at about 25 W cm${}^{-1}$ K${}^{-1}$ for diamonds of natural isotopic composition. At the same time, the $\kappa (T)$ of the crystal showed strong suppression $>10$ % at temperatures $6<T<120$ K with a maximum decrease of 2.7 times at $\approx 40$ K compared to high purity diamonds. This behavior of the conductivity is attributed to a phonon scattering by charge carriers bound to nitrogen-related impurity centers, which is ineffective, however, at room and higher temperatures. The $\kappa (T)$ has been calculated within the model based on the Callaway theory taking into account the elastic phonon scattering off charge carriers (holes and electrons) in the ground states of doping centers, and a very good agreement between the measured and theoretical data has been achieved. The model also gives a good approximation to the experimental data for $\kappa (T)$ given in the literature for synthetic and natural single-crystal diamonds.

The production of carbide tools with polycrystalline diamond coatings, which are used for processing modern carbon composite materials, includes a number of technological techniques that ensure reliable adhesion of the coating to the substrate. This review examines these features of substrate-surface pretreatment to improve adhesion, which includes chemical etching, mechanical hardening, modification by ion beams, plasma treatment and application of buffer layers between the substrate and the coating. This review also discusses the advantages and disadvantages of the most common methods for obtaining polycrystalline diamond coatings using hot filament and deposition of coatings from microwave plasma.

It has been shown recently that a photoconductive antenna (PCA) based on a nitrogen-doped diamond can be effectively excited by the second harmonic of a Ti:sapphire laser (λ = 400 nm). The THz emission performance of the PCA can be significantly increased if a much stronger electric field is created between the close-located electrodes. To produce a homogeneous electric field over the entire excited diamond volume, the laser fabrication of deep-buried graphite electrodes inside the diamond crystal was proposed. Several electrodes consisting of the arrays of buried pillars connected by the surface graphite stripes were produced inside an HPHT diamond crystal using femtosecond and nanosecond laser pulses. Combining different pairs of the electrodes, a series of PCAs with various electrode interspaces was formed. The THz emission of the PCAs equipped with the buried electrodes was measured at different values of excitation fluence and bias voltage (DC and pulsed) and compared with the emission of the same diamond crystal when the bias voltage was applied to the surface electrodes on the opposite faces. All examined PCAs have demonstrated the square-law dependencies of the THz fluence on the field strength, while the saturation fluence fluctuated in the range of 1200–1600 µJ/cm². The THz emission performance was found to be approximately the same for the PCAs with the surface electrodes and with the buried electrodes spaced at a distance of 1.4–3.5 mm. However, it noticeably decreased when the distance between the buried electrodes was reduced to 0.5 mm.