We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5 nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas–Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO₂ or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas–Shatzkes model in consideration of the experimental findings.

We consider the impact of disorder on the spectrum of three-dimensional nodal-line semimetals. We show that the combination of disorder and a tilted spectrum naturally leads to a non-Hermitian self-energy contribution that can split a nodal line into a pair of exceptional lines. These exceptional lines form the boundary of an open and orientable bulk Fermi ribbon in reciprocal space on which the energy gap vanishes. We find that the orientation and shape of such a disorder-induced bulk Fermi ribbon is controlled by the tilt direction and the disorder properties, which can also be exploited to realize a twisted bulk Fermi ribbon with nontrivial winding number. Our results put forward a paradigm for the exploration of non-Hermitian topological phases of matter.

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.

Thin films of ferromagnetic topological insulator materials can host the quantum anomalous Hall effect without the need for an external magnetic field. Inducing Cooper pairing in such a material is a promising way to realize topological superconductivity with the associated chiral Majorana edge states. However, finding evidence of the superconducting proximity effect in such a state has remained a considerable challenge due to inherent experimental difficulties. Here we demonstrate crossed Andreev reflection across a narrow superconducting Nb electrode that is in contact with the chiral edge state of a quantum anomalous Hall insulator. In the crossed Andreev reflection process, an electron injected from one terminal is reflected out as a hole at the other terminal to form a Cooper pair in the superconductor. This is a compelling signature of induced superconducting pair correlation in the chiral edge state. The characteristic length of the crossed Andreev reflection process is found to be much longer than the superconducting coherence length in Nb, which suggests that the crossed Andreev reflection is, indeed, mediated by superconductivity induced on the quantum anomalous Hall insulator surface. Our results will invite future studies of topological superconductivity and Majorana physics, as well as for the search for non-abelian zero modes.

We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field, and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique $\pi$-periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods.

The potential of a wide range of layered ternary carbide and nitride Mn+1AXn [an early transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or N (X)] phases as conductors in interconnect metal lines in advanced complementary metal-oxide-semiconductor (CMOS) technology nodes has been evaluated using automated first-principles simulations based on density-functional theory. The resistivity scaling potential of these compounds, i.e., the expected sensitivity of their resistivity to reduced line dimensions, has been benchmarked against Cu and Ru by evaluating their transport properties within a semiclassical transport formalism. In addition, their cohesive energy has been assessed as a proxy for the resistance against electromigration and the need for diffusion barriers. The results indicate that numerous MAX phases show promise as conductors in interconnects of advanced CMOS technology nodes.