This paper presents a new wireless sensor structure based on a substrate integrated circular waveguide (SICW) for the temperature test in harsh environments. The sensor substrate material is 99% alumina ceramic, and the SICW structure is composed of upper and lower metal plates and a series of metal cylindrical sidewall vias. A rectangular aperture antenna integrated on the surface of the SICW resonator is used for electromagnetic wave transmission between the sensor and the external antenna. The resonant frequency of the temperature sensor decreases when the temperature increases, because the relative permittivity of the alumina ceramic increases with temperature. The temperature sensor presented in this paper was tested four times at a range of 30–1200 °C, and a broad band coplanar waveguide (CPW)-fed antenna was used as an interrogation antenna during the test process. The resonant frequency changed from 2.371 to 2.141 GHz as the temperature varied from 30 to 1200 °C, leading to a sensitivity of 0.197 MHz/°C. The quality factor of the sensor changed from 3444.6 to 35.028 when the temperature varied from 30 to 1000 °C.

The highly sensitive pressure sensor presented in this paper aims at wireless passive sensing in a high temperature environment by using microwave backscattering technology. The structure of the re-entrant resonator was analyzed and optimized using theoretical calculation, software simulation, and its equivalent lump circuit model was first modified by us. Micro-machining and high-temperature co-fired ceramic (HTCC) process technologies were applied to fabricate the sensor, solving the common problem of cavity sealing during the air pressure loading test. In addition, to prevent the response signal from being immersed in the strong background clutter of the hermetic metal chamber, which makes its detection difficult, we proposed two key techniques to improve the signal to noise ratio: the suppression of strong background clutter and the detection of the weak backscattered signal of the sensor. The pressure sensor demonstrated in this paper works well for gas pressure loading between 40 and 120 kPa in a temperature range of 24 °C to 800 °C. The experimental results show that the sensor resonant frequency lies at 2.1065 GHz, with a maximum pressure sensitivity of 73.125 kHz/kPa.

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al₂O₃ based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height Ф_B, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10⁻⁵ A/cm², 1 × 10⁻⁴ A/cm², and 1 × 10⁻³ A/cm², respectively.

A wireless and passive temperature sensor operating up to 800 °C is proposed. The sensor is based on microwave backscatter RFID (radio frequency identification) technology. A thin-film planar structure and simple working principle make the sensor easy to operate under high temperature. In this paper, the proposed high temperature sensor was designed, fabricated, and characterized. Here the 99% alumina ceramic with a dimension of 40 mm × 40 mm × 1 mm was prepared in micromechanics for fabrication of the sensor substrate. The metallization of the Au slot patch was realized in magnetron sputtering with a slot width of 2 mm and a slot length of 32 mm. The measured resonant frequency of the sensor at 25 °C is 2.31 GHz. It was concluded that the resonant frequency decreases with the increase in the temperature in range of 25–800 °C. It was shown that the average sensor sensitivity is 101.94 kHz/°C.

Purpose: This paper aims to present a novel wireless passive pressure sensor based on an aperture coupled microstrip patch antenna embedded with an air cavity for pressure measurement. Design/methodology/approach: In this paper, the sensitive membrane deformed when pressure was applied on the surface of the sensor and the relative permittivity of the mixed substrate changed, resulting in a change in the center frequency of the microstrip antenna. The size of the pressure sensor is determined by theoretical calculation and software simulation. Then, the sensor is fabricated separately as three layers using printed circuit board technology and glued together at last. The pressure test of the sensor is carried out in a sealed metal tank. Findings: The extracted resonant frequency was found to monotonically shift from 2.219 to 1.974 GHz when the pressure varied from 0 to 300 kPa, leading to an average absolute sensitivity of 0.817 MHz/kPa. Research limitations/implications: This pressure sensor proposed here is mainly to verify the feasibility of this wireless passive maneuvering structure, and when the base material of this structure is replaced with some high-temperature-resistant material, the sensor can be used to measure the pressure inside the aircraft engine. Originality/value: The sensor structure proposed here can be used to test the pressure in a high-temperature environment when the base material is replaced with some high-temperature-resistant material.