A computer vision system tries to mimic our primary sense (sight) in order to gather information without the need for physical interaction, in fact such systems are able to grade automatically, and extract useful information with a degree of sensitivity closer to that of a human, reducing considerably the margin of error. By performing digital image processing, defined as the acquisition and processing of visual information by computer, computer vision systems allow analyzing image data for specific applications in order to determine how images can be used to extract the required information. Among the most important features for accurate classification and sorting of products it can be mentioned the shape. The shape of objects or regions of interest are important features used for content representation, and require good segmentation to detect objects or regions. Basically, shape characterization is of two types: boundary-based and regionbased. Boundary-based shape features include rectilinear shapes, polygonal approximation, finite element models, and Fourier-based shape descriptors. Region-based features include statistical moments and grid-based approaches. Object shape detection using a technique based on Hough Transform for further segmentation is presented on this paper
We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si (100) or Si (111), reveal a strong room-temperature excitonic emission at . We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the . Since the excitonic binding energy in this direct band-gap material is of the order of at room temperature, the electron-hole recombination and subsequent light emission at and are mediated by excitonic effects.
22 May 2015 in Journal of the Science of Food and Agriculture