Micro-devices that use electric fields to trap, analyze and inactivate micro-organisms vary in concept, design and application. The application of electric fields to manipulate and inactivate bacteria and single-celled organisms has been described extensively in the literature. By contrast, the effect of such fields on viruses is not well understood. This review explores the possibility of using existing methods for manipulating and inactivating larger viruses and bacteria, for smaller viruses, such as SARS-CoV-2. It also provides an overview of the theoretical background. The findings may be used to implement new ideas and frame experimental parameters that optimize the manipulation, sampling and inactivation of SARS-CoV-2 electrically.

We present a novel, wafer-based fabrication process that enables integration and assembly of electronic components, such as ASICs and decoupling capacitors, with flexible interconnects. The electronic components are fabricated in, or placed on precisely defined and closely-spaced silicon islands that are connected by interconnects embedded in parylene-based flexible thin film. This fully CMOS compatible approach uses optimized DRIE processes and an SiO₂ mesh-shaped mask, allowing for the simultaneous definition of micrometer- to millimeter-sized structures without compromising the flexibility of the device. In a single fabrication flow a unique freedom in dimensions of both the flexible film and the silicon islands can be achieved making this new technique ideal for the realization of semi-flexible/foldable implantable devices, where structures of different sizes have to be combined together for the ultimate miniaturization.

Low-temperature atmospheric plasma (LTP) is widely used in industrial processes, such as disinfection, surface modification and wastewater treatment. The dielectric barrier discharge (DBD) is regarded as one of the most robust and reliable methods for generating LTP in ambient air. Compared to conventional AC excitation, pulsed powering offers several advantages (i.e., lower energy use and heat production). The present trend is to use short and fast pulses (in the nano- and picosecond range). In this review, the key design parameters of a DBD (barrier thickness, relative permittivity and gap distance) are discussed. Material-specific phenomena like surface charging and degradation are analyzed. The complex interactions between the pulse source and DBD are examined. By mapping the interdependencies, this review aims to support the rational design and optimization of pulsed DBD systems, and to facilitate their broader industrial use.

This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25C to 400C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.