A fully flexible pH sensor using nanoporous ZnO on extended gate thin film transistor (EGTFT) fabricated on polymeric substrate is demonstrated. The sensor adopts the Low Temperature Polycrystalline Silicon (LTPS) TFT technology for the active device, since it allows excellent electrical characteristics and good stability and opens the way towards the possibility of exploiting CMOS architectures in the future. The nanoporous ZnO sensitive film, consisting of very thin (20 nm) crystalline ZnO walls with a large surface-to-volume ratio, was chemically deposited at 90 °C, allowing simple process integration with conventional TFT micro-fabrication processes compatible with wide range of polymeric substrates. The pH sensor showed a near-ideal Nernstian response (∼59 mV/pH), indicating an ideality factor α ∼ 1 according to the conventional site binding model. The present results can pave the way to advanced flexible sensing systems, where sensors and local signal conditioning circuits will be integrated on the same flexible substrate.

Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible luminescent defects in ZnO NRs as a function of post growth thermal treatments, and find four distinct visible deep level defect states (VDLSs): blue (2.52 eV), green (2.23 eV), orange (2.03 eV), and red (1.92 eV). Photoluminescence (PL) studies reveal a distinct modification in the UV (3.25 eV) emission intensity and a shift in the visible spectra after annealing. Annealing at 600 °C in Ar (Ar600) and O₂ (O600) causes a blue and red-shift in the visible emission band, respectively. All samples demonstrate orange emission from the core of the NR, with an additional surface related green, blue, and red emission in the As-Prep, Ar600, and O600 samples, respectively. From PL excitation (PLE) measurements we determine the onset energy for population of the various VDLSs, and relate it to the presence of an Urbach tail below the conduction band due to a presence of ionized Zn_i or Zn_i complexes. We measured an onset energy of 3.25 eV for the as prepared sample. The onset energy red-shifts in the annealed samples by about 0.05 to 0.1 eV indicating a change in the defect structure, which we relate to the shift in the visible emission. We then used X-ray photoemission spectroscopy (XPS), and elastic recoil detection analysis (ERDA) to understand changes in the surface structure, and H content, respectively. The results of the XPS and ERDA analysis explain how the chemical states are modified due to annealing. We summarize our results by correlating our VDLSs with specific intrinsic defect states to build a model for PL emission in ZnO NRs. These results are important for understanding how to control defect related visible emission for sensing and electroluminescence applications.

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V_o) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V_o states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O₂ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

Energy storage devices based on earth-abundant materials are key steps towards portable and sustainable technologies used in daily life. Pseudocapacitive devices, combining high power and high energy density features, are widely required, and transition metal oxides represent promising building materials owing to their excellent stability, abundance, and ease of synthesis. Here, we report an original ZnO-based nanostructure, named nanostars (NSs), obtained at high yields by chemical bath deposition (CBD) and applied as pseudocapacitors. The ZnO NSs appeared as bundles of crystalline ZnO nanostrips (30 nm thin and up to 12 µm long) with a six-point star shape, self-assembled onto a plane. X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL) were used to confirm the crystal structure, shape, and defect-mediated radiation. The ZnO NSs, dispersed onto graphene paper, were tested for energy storage by cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) analyses, showing a clear pseudocapacitor behavior. The energy storage mechanism was analyzed and related to oxygen vacancy defects at the surface. A proper evaluation of the charge stored on the ZnO NSs and the substrate allowed us to investigate the storage efficiency, measuring a maximum specific capacitance of 94 ${\mathrm{F}\mathrm{g}}^{-1}$ due to ZnO nanostars alone, with a marked diffusion-limited behavior. The obtained results demonstrate the promising efficacy of ZnO-based NSs as sustainable materials for pseudocapacitors.