The heterogeneous integration of III-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the III-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of III-nitrides (>1000 °C) are incompatible with direct heteroepitaxy on some semiconductor systems and fabricated wafers. Thus, the MOCVD growth temperature of III-nitride films must be lowered to combine them with other systems. In this work, 16 nm-thick Si:GaN films were grown by MOCVD at 550 °C using a flow modulation epitaxy scheme. By optimizing the disilane flow conditions, electron concentrations up to 5.9 × 10¹⁹ cm⁻³ were achieved, resulting in sheet resistances as low as 1070 Ω/□. Film mobilities ranged from 34 to 119 cm² V⁻¹ s⁻¹. These results are promising for III-nitride integration and expand device design and process options for III-nitride-based electronic devices.

The N-polar orientation of GaN may be an option for the development of longer wavelength visible optoelectronics because of its higher indium uptake. N-polar InGaN LEDs with an inverted p-side down configuration and buried tunnel junctions were grown by metalorganic chemical vapor deposition. Fabricated devices in the wavelength range of 450–509 nm showed record high light output power for N-polar LEDs, up to 0.21 mW on-wafer at 20 A/cm² with an emission wavelength of 470 nm. These results represent an improvement in performance of more than one order of magnitude over previously reported N-polar LEDs, demonstrating potential for the N-polar orientation in the nitride optoelectronics space.

Investigation of the growth and properties of binary ScN can aid in the understanding of its ferroelectric ternary alloys with GaN and AlN, but there are no existing data for ScN grown by metalorganic chemical vapor deposition (MOCVD). In this work, ScN growth by MOCVD was demonstrated using the Sc precursor (EtCp)2Sc(dbt). A broad range of growth temperatures, pressures, and V/III ratios were tested to investigate the impact of growth parameters on the properties of MOCVD-grown ScN. Approximately 100 nm-thick ScN films with growth rates from 0.06 to 0.20 Å/s were deposited on c-sapphire, (0001) GaN, Si-face 4H-SiC, and (001) Si. X-ray diffraction measurements showed that ScN films were solely (111)-oriented on both sapphire and GaN. Hall effect measurements revealed very high n-type electrical charge in the samples. The carrier concentrations of ScN on sapphire ranged from 2.1 × 1020 to 7.2 × 1020 cm−3, with electron mobilities in the range of 20–7 cm2 V−1 s−1. ScN films on GaN exhibited carrier concentrations from 9.6 × 1019 to 2.5 × 1020 cm−3 and electron mobilities from 42 to 8.5 cm2 V−1 s−1. The lowest sheet resistance of 45 Ω/□ (resistivity of 5.2 × 10−4 Ω-cm) was achieved for an ScN on sapphire film. These results indicate the potential for integrating ScN into the next generation of nitride electronics through MOCVD growth.

In this study, the impact of InGaN film thickness and different compositionally graded structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) were studied. In addition, the impact of the degree of porosification on the In incorporation and relaxation of InGaN were examined. 82% relaxed 1μm thick In_0.18Ga_0.82N, which is equivalent to a fully relaxed In-composition of 15%, on porous GaN PS was obtained. Additionally, multi-quantum wells (MQWs) grown on the MBE InGaN-on-porous GaN base layers by MOCVD showed ∼85 nm redshift in comparison with MQWs grown on planar GaN. The developed InGaN-on-porous-GaN PSs can provide an alternative route to grow MQW with a high In content which is essential for high-efficiency nitride-based red LEDs.

Quaternary AlGaScN may mitigate ongoing growth challenges with metalorganic chemical vapor deposition (MOCVD)-grown AlScN, namely, compositional inhomogeneities, interface quality, and high impurity levels. However, there are very few reports on epitaxial AlGaScN with no MOCVD data. In this work, MOCVD growth experiments of AlGaScN/GaN high electron mobility transistor (HEMT) structures were performed. AlGaScN/GaN samples demonstrated abrupt interfaces and smooth surfaces. The quaternary barrier structures consistently exhibited high mobilities and low sheet resistances compared to equivalent ternary AlScN-based structures. Electron mobilities of up to 1731 cm2 V−1 s−1 were achieved at a sheet charge of 1.7 × 1013 cm−2, with a sheet resistance of 212 Ω/□. These results indicate significant potential for AlGaScN barrier HEMTs grown by MOCVD.

The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH₃ flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN.