Ga₂O₃-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga₂O₃/MgO/Nb:SrTiO₃ heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 10⁵ and detectivity of 2.33 × 10¹⁶ Jones among the reported wafer-scale grown Ga₂O₃-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga₂O₃-based electronics and optoelectronics.

An epitaxial β-Ga₂O₃/Ga:ZnO heterojunction based self-powered DUV photodetector with an excellent wavelength selectivity and a high DUV/visible rejection ratio.

A self-powered solar-blind photodetector with largeV_ocenhancing performance is constructed on the PEDOT:PSS/Ga₂O₃hybrid heterojunction.

The oxygen vacancies regulated via the lattice O atom formation/desorption process under oxidizing/reducing annealing reveal an effective modulating effect on the ε-Ga ₂ O ₃ photodetector performances.