The oxygen vacancies regulated via the lattice O atom formation/desorption process under oxidizing/reducing annealing reveal an effective modulating effect on the ε-Ga 2 O 3 photodetector performances.
19 February 2020 in Journal of Materials Chemistry C
A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.
12 October 2020 in ACS Applied Materials & Interfaces