Finite control set model predictive control (FCS-MPC) selects a voltage vector state at fixed sampling period without the use of a modulator. As a direct consequence, the conventional implementation of FCS-MPC presents variable switching frequency. Period control approach (PCA-FCS-MPC) for a two-level three-phase inverter is effective in controlling the switching frequency without the need of a modulation stage. However, its implementation for a three-level three-phase inverter is not straightforward due to the need for synchronizing the commutation of all the power semiconductors in each leg. This work presents a new method to implement this strategy in a three phase three-level neutral point clamped voltage source inverter (NPC-VSI), named direct grouping, which modifies the approach of PCA such that its implementation becomes possible on the NPC-VSI. This new method, along with a state-of-the art solution, are analyzed in detail to establish a metric for the evaluation of their performance, from which the new proposal shows improved outcome. Experimental results validate the switching frequency control performance, flexibility, and efficacy of the proposed strategy.

Open-source tools and PDKs facilitate the design, implementation and silicon validation of integrated circuits, circumventing the traditional barriers associated with this field. Power integrated circuits, conversely, are increasingly relevant in modern systems targeting energy-efficient applications. In this study, the design of a power integrated circuit is examined from the perspective of open-source silicon design, which has recently emerged as a feasible approach for acquiring functional silicon-proven designs with low entry barriers. Utilizing this workflow, we showcase the complete design, simulation, layout, and experimental validation of an integrated multilevel dc-dc converter: specifically, a three-level flying capacitor buck converter. Our system converts 3.3V dc bus levels to 1.8V and below, for a measured peak efficiency of 89.3%. The maximum measured load current is 250mA, using two conversion cores operating in interleaved mode. The system has been implemented in 6.27mm ² of active area using the Skywater 130nm standard CMOS technology open-source PDK.

The reliability of power converters is intricately tied to the variations in the junction temperature of semiconductor devices. Therefore, possessing accurate models of these components is of paramount importance. This research introduces an electrothermal model focusing on Gallium Nitride (GaN) based DC-DC converters. The experimental evaluation leverages a GaN-based Two-Level Buck Converter (TLBC), where current control is achieved via pulse width modulation (PWM), while a comprehensive thermal model is developed in the range of 10 to 500 kHz at fixed switching frequencies. The test-bed involves direct temperature measurement utilizing infrared thermal sensors. The proposed model undergoes validation through comparison with experimental data in steady-state and dynamic conditions. Finally, the contribution of this work is to generate an accurate electrothermal model of a Two-level Buck Converter based on GaN-HEMT technology transistors to enable active thermal control (ATC) implementation in steady-state and dynamic mode. The aim of the study is to address the management of component temperature rise given the need for full integration requirements as a major challenge in new-generation of DC-DC power converters

In this study, we present the design, simulation, and implementation of a DC-DC synchronous buck converter utilizing IISB’s 2 $\mathrm{\mu }$m 4H-silicon carbide (SiC) complementary metal–oxide–semiconductor (CMOS) technology. The converter is designed to meet the demands of modern integrated circuits, particularly in the field of integrated power management. The SiC technology offers enhanced performance and reliability at high temperatures, making it especially suitable for applications that operate in these conditions, including automotive systems, and aerospace, among others. The power transistors and gate drivers are fully integrated on-chip, optimizing efficiency and minimizing footprint. Additionally, the study contributes to the understanding of SiC technology and its application in integrated circuit design. Simulation results demonstrate a peak efficiency of 86.6% at 120 mA load current and 84.8% at 300 mA load current, showing the converter performance under different operating conditions. Furthermore, at high temperatures (295 °C), the converter achieves an efficiency of 89.6%, demonstrating its robustness and versatility in extreme environments. These findings contribute to the advancement of integrated circuit design and facilitate advancements in more efficient and robust power management solutions.

The multilevel dual-active-bridge (ML-DAB) converter offers enhanced performance and power density operation compared with conventional DAB counterparts [1]. This paper introduces a GaN-FET-based T-type DAB (T-type DAB) converter interface, designed to enable transition between full power conversion (FPC) and partial power conversion (PPC) modes. The proposed converter generates five voltage levels on both the primary and secondary sides of the high-frequency transformer (HFT), reducing voltage transitions (dv/dt) and increasing the high power efficiency range. The main contribution of the proposed converter lies in the integration of a ML-DAB architecture with the capability to operate in PPC reconfiguration, enabling the processing of only a fraction of the total power with enhanced thermal performance. Output voltage regulation is achieved by a single-phase shift (SPS) between the primary and secondary sides, simplifying control and enhancing overall performance. Simulation and experimental tests under a scaled-down prototype to verify the proposed modulation method and control scheme implementation are performed.