Chromium Nitride (CrN) coatings have widespread utilization across numerous industrial applications, primarily attributed to their excellent properties. Among the different methods for CrN coating synthesis, direct current magnetron sputtering (DCMS) has been the dominant technique applied. Nonetheless, with the expanded applications of CrN coatings, the need for enhanced mechanical performance is concurrently escalating. High-power impulse magnetron sputtering (HiPIMS), an innovative coating deposition approach developed over the past three decades, is gaining recognition for its capability of yielding coatings with superior mechanical attributes, thereby drawing significant research interest. Considering that the mechanical performance of a coating is fundamentally governed by its microstructural properties, a comprehensive review of CrN coatings fabricated through both techniques is presented. This review of recent literature aims to embark on an insightful comparison between DCMS and HiPIMS, followed by an examination of the microstructure of CrN coatings fabricated via both techniques. Furthermore, the exploration of the underlying factors contributing to the disparities in mechanical properties observed in CrN coatings is revealed. An assessment of the advantages and potential shortcomings of HiPIMS is discussed, offering insight into CrN coating fabrication.

In this paper, Cu thin films were deposited on Si (100) substrates by the high−power impulse magnetron sputtering (HiIPMS) technique, and the effects of different duty cycles (from 2.25% to 5.25%) on the plasma discharge characteristics, microstructure, and electrical properties of Cu thin films were investigated. The results of the target current test show that the peak target current remains stable under 2.25% and 3% duty cycle conditions. Under the conditions of a 4.5% and 5.25% duty cycle, the target peak current shows a decreasing trend. The average power of the target shows a rising trend with the increase in the duty cycle, while the peak power of the target shows a decreasing trend with the increase in the duty cycle. The results of OES show that with the increase in the duty cycle, the total peak intensity of copper and argon emissions shows an overall increasing trend. The duty cycle from 3% to 4.5% change in copper and argon emission peak total intensity change is not obvious. The deposition rate and surface morphology of the copper film were investigated by scanning electron microscopy, and the deposition rate of the copper film increased with the increase in the duty cycle, which was mainly due to the increase in the average power. The surface roughness of the copper film was evaluated by atomic force microscopy. X−ray diffraction (XRD) was used to analyze the grain size and texture of the Cu film, and the results showed that the average grain size of the Cu film increased from 38 nm to 59 nm on the (111) and (200) crystal planes. Four−probe square resistance test copper film resistivity in 2.25%, 3% low duty cycle conditions of the copper film resistivity is generally higher than 4.5%, 5.25% high duty cycle conditions, the copper film resistivity shows the trend of change is mainly affected by the copper film grain size and the (111) face of the double effect of the optimal orientation. The lowest resistivity of the copper film measured under the 4.5% duty cycle condition is 1.7005 μΩ·cm, which is close to the intrinsic resistivity of the copper film of 1.67 μΩ·cm.

High-power pulse magnetron sputtering is a new type of magnetron sputtering technology that has advantages such as high peak power density and a high ionization rate compared to DC magnetron sputtering. In this paper, we report the effects of different pulse widths on the current waveform and plasma spectrum of target material sputtering, as well as the structure and properties of Cu films prepared under the same sputtering voltage and duty cycle. Extending the pulse width can make the sputtering enter the self-sputtering (SS) stage and improve the ion quantity of sputtered particles. The Cu film prepared by HiPIMS with long pulse width has higher bond strength and lower electrical resistivity compared to the Cu film prepared by short pulse width. In terms of microstructure, the Cu film prepared by HiPIMS with the long pulse width has a larger grain size and lower micro-surface roughness. When the pulse width is bigger than 200 μs, the microstructure of the Cu film changes from granular to branched. This transformation reduces the interface on the Cu film, further reducing the resistivity of the Cu film. Compared to short pulses, long pulse width HiPIMS can obtain higher quality Cu films. This result provides a new process approach for preparing high-quality Cu films using HiPIMS technology.

In the application of ceramic dielectric filters, to achieve electromagnetic shielding of signals and subsequent integrated applications, it is necessary to carry out metallization treatment on their surfaces. The quality of metallization directly affects the performance of the filter. However, when in use, the filter may encounter harsh environmental conditions. Therefore, the surface-metallized film needs to have strong corrosion resistance to ensure its long-term stability during use. In this paper, Cu films and copper–chromium alloy films were fabricated on Si (100) substrates and BaTiO₃ ceramic substrates by HiPIMS technology. The effects of different added amounts of Cr on the microstructure, electrical conductivity, and corrosion resistance of the Cu films were studied. The results show that with an increase in Cr content, the preferred orientation of the (111) crystal plane gradually weakens, and the grains of the Cu-Cr alloy film gradually decrease. The particles on the film surface are relatively coarse, increasing the surface roughness of the film. However, after doping, the film still maintains a relatively low surface roughness. After doping with Cr, the resistivity of the film increases with the increase in Cr content. The film–substrate bonding force shows a trend of first increasing and then decreasing with the increase in Cr content. Among them, when the Cr content is 2 at.%, the film–substrate bonding force is the greatest. The Cu-Cr alloy film has good corrosion resistance in static corrosion. With the increase in Cr content, the Tafel slope of the cathode increases, and the polarization resistance R_p also increases with the increase in Cr content. After the addition of Cr, both the oxide film resistance and the charge transfer resistance of the electrode reaction of the Cu-Cr alloy film are greater than those of the Cu film. This indicates that the addition of Cr reduces the corrosion rate of the alloy film and enhances its corrosion resistance in a NaCl solution. 2 at.% Cr represents a balanced trade-off in composition. While ensuring the film is dense, uniform, and has good electrical conductivity, the adhesion between the film and the substrate is maximized, and the corrosion resistance of the Cu film is also improved.

In this study, we investigate the role of film thickness in modulating the properties of Cu films deposited on BaTiO₃ ceramic substrates using direct current magnetron sputtering (DCMS) and high-power pulsed magnetron sputtering (HiPIMS). While HiPIMS is known for producing dense films, and the thickness-dependent properties of sputtered Cu films are well-documented, this work uniquely explores the synergistic interplay between deposition technique and thickness on BaTiO₃ ceramic substrates, revealing novel insights into stress evolution and property optimization for advanced microelectronic and coating applications. Cu films of 300 nm, 1000 nm, and 1700 nm were systematically compared for their microstructures, surface morphologies, and electrical and mechanical properties, elucidating the critical role of thickness in densification, stress state, and overall performance. The results indicate that the target current and voltage waveforms of HiPIMS are similar to square waves, and the ionization rate is significantly higher than that of DCMS. Still, the deposition rate at the same power of 180 W is only 44.6% of that of DCMS. The films obtained by both processes present a strong (111) orientation; the crystallite size of the DCMS film grows with increasing thickness, while the HiPIMS film shows increasing and then decreasing, and its residual stress is overall lower than that of DCMS. In terms of surface morphology, DCMS films appeared porous and rough, whereas HiPIMS films were denser and smoother. In terms of properties, the resistivity of HiPIMS films is significantly lower than that of DCMS, especially at 1000 nm thickness. The binding force is also better than that of DCMS, especially at thicknesses less than 1000 nm, which is mainly attributed to the compressive stresses introduced by the energetic ion bombardment at the early deposition stage. These findings provide new mechanistic insights into thickness-dependent stress and property modulation, offering a reference for tailoring high-performance Cu films through process optimization.