In the application of ceramic dielectric filters, to achieve electromagnetic shielding of signals and subsequent integrated applications, it is necessary to carry out metallization treatment on their surfaces. The quality of metallization directly affects the performance of the filter. However, when in use, the filter may encounter harsh environmental conditions. Therefore, the surface-metallized film needs to have strong corrosion resistance to ensure its long-term stability during use. In this paper, Cu films and copper–chromium alloy films were fabricated on Si (100) substrates and BaTiO₃ ceramic substrates by HiPIMS technology. The effects of different added amounts of Cr on the microstructure, electrical conductivity, and corrosion resistance of the Cu films were studied. The results show that with an increase in Cr content, the preferred orientation of the (111) crystal plane gradually weakens, and the grains of the Cu-Cr alloy film gradually decrease. The particles on the film surface are relatively coarse, increasing the surface roughness of the film. However, after doping, the film still maintains a relatively low surface roughness. After doping with Cr, the resistivity of the film increases with the increase in Cr content. The film–substrate bonding force shows a trend of first increasing and then decreasing with the increase in Cr content. Among them, when the Cr content is 2 at.%, the film–substrate bonding force is the greatest. The Cu-Cr alloy film has good corrosion resistance in static corrosion. With the increase in Cr content, the Tafel slope of the cathode increases, and the polarization resistance R_p also increases with the increase in Cr content. After the addition of Cr, both the oxide film resistance and the charge transfer resistance of the electrode reaction of the Cu-Cr alloy film are greater than those of the Cu film. This indicates that the addition of Cr reduces the corrosion rate of the alloy film and enhances its corrosion resistance in a NaCl solution. 2 at.% Cr represents a balanced trade-off in composition. While ensuring the film is dense, uniform, and has good electrical conductivity, the adhesion between the film and the substrate is maximized, and the corrosion resistance of the Cu film is also improved.

In this study, we investigate the role of film thickness in modulating the properties of Cu films deposited on BaTiO₃ ceramic substrates using direct current magnetron sputtering (DCMS) and high-power pulsed magnetron sputtering (HiPIMS). While HiPIMS is known for producing dense films, and the thickness-dependent properties of sputtered Cu films are well-documented, this work uniquely explores the synergistic interplay between deposition technique and thickness on BaTiO₃ ceramic substrates, revealing novel insights into stress evolution and property optimization for advanced microelectronic and coating applications. Cu films of 300 nm, 1000 nm, and 1700 nm were systematically compared for their microstructures, surface morphologies, and electrical and mechanical properties, elucidating the critical role of thickness in densification, stress state, and overall performance. The results indicate that the target current and voltage waveforms of HiPIMS are similar to square waves, and the ionization rate is significantly higher than that of DCMS. Still, the deposition rate at the same power of 180 W is only 44.6% of that of DCMS. The films obtained by both processes present a strong (111) orientation; the crystallite size of the DCMS film grows with increasing thickness, while the HiPIMS film shows increasing and then decreasing, and its residual stress is overall lower than that of DCMS. In terms of surface morphology, DCMS films appeared porous and rough, whereas HiPIMS films were denser and smoother. In terms of properties, the resistivity of HiPIMS films is significantly lower than that of DCMS, especially at 1000 nm thickness. The binding force is also better than that of DCMS, especially at thicknesses less than 1000 nm, which is mainly attributed to the compressive stresses introduced by the energetic ion bombardment at the early deposition stage. These findings provide new mechanistic insights into thickness-dependent stress and property modulation, offering a reference for tailoring high-performance Cu films through process optimization.