Plastic in the dark: Inorganic semiconductors, such as silicon and gallium arsenide, are brittle materials. This property means that large single crystals are cleaved into thin sheets. Oshima et al. show that zinc sulfide is, in contrast, a plastic material if deformed in total darkness. Plastic deformation is likely inhibited when light is present because photoexcited charge carriers become trapped at these sites and pin them through electrostatic effects. Science , this issue p. 772

Functional and structural ceramics have become irreplaceable in countless high-tech applications. However, their inherent brittleness tremendously limits the application range and, despite extensive research efforts, particularly short cracks are hard to combat. While local plasticity carried by mobile dislocations allows desirable toughness in metals, high bond strength is widely believed to hinder dislocation-based toughening of ceramics. Here, we demonstrate the possibility to induce and engineer a dislocation microstructure in ceramics that improves the crack tip toughness even though such toughening does not occur naturally after conventional processing. With modern microscopy and simulation techniques, we reveal key ingredients for successful engineering of dislocation-based toughness at ambient temperature. For many ceramics a dislocation-based plastic zone is not impossible due to some intrinsic property (e.g. bond strength) but limited by an engineerable quantity, i.e. the dislocation density. The impact of dislocation density is demonstrated in a surface near region and suggested to be transferrable to bulk ceramics. Unexpected potential in improving mechanical performance of ceramics could be realized with novel synthesis strategies.

Recently, several creative processing techniques yielded thermoelectrics with reduced thermal conductivity and, thereby, an enhanced figure or merit. These were based on engineered complex microstructures with attendant dislocation structures. In this study, we implement highly controlled mesoscopic dislocation structures into the model thermoelectric SrTiO₃ in order to quantify phonon scattering at dislocations. Both single crystals and polycrystalline material have been furnished with enhanced dislocation densities increased by a factor of 150–300 by plastic deformation. Thermal conductivity was measured using laser flash analysis between room temperature and 325 °C. Etch pit techniques and ultra-high voltage electron microscopy afford quantification of dislocation density. Experimental results were compared to predictions by the Debye-Callaway model. The latter revealed that dislocation densities of 10¹⁵ m⁻² would be necessary for the reduction of thermal conductivity of SrTiO₃ in the investigated temperature range, which could not be realized using the plastic deformation mechanism applied.