In the context of the two-temperature thermoelasticity theory, a novel mathematical–physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The two-dimensional (2D) Cartesian coordinate is used to study the coupling between the thermo-elastic plasma waves and moisture diffusivity. Dimensionless quantities are taken for the main physical fields with some initial conditions in the Laplace transform domain. The linear solutions are obtained analytically along with unknown variables when some conditions are loaded at the surface of the homogenous medium according to the two-temperature theory. The Laplace transform technique in inversion form is utilized with some numerical algebraic approximations in the time domain to observe the exact expressions. Due to the effects of the two-temperature parameter and moisture diffusivity, the numerical results of silicon material have been introduced. The impacts of thermoelectric, thermoelastic, and reference moisture parameters are discussed graphically with some physical explanations.

Natural convection of nanoliquid in a square porous enclosure has been studied using non homogeneous two-phase Buongiorno’s model. The outer of enclosure has cold temperature and a circular cylinder is put at the center. A finite heated segment is located on the top cylinder surface which is otherwise insulated. The momentum in the porous layer is modeled applying the Brinkman-Forchheimer equations. The analysis are conducted in the following interval of the associated groups: the portion of heated surface (5% ≤ H ≤ 100%), the concentration (0.0 ≤ ϕ ≤ 0.04), the Darcy number, 10⁻⁵ ≤ D_a ≤ 10⁻² and the cylinder size, (0.15 ≤ R ≤ 0.25). The minimum heat transfer rate of the active surface were obtained at location ξ = 90°. In general, the ratio of the heat transfer per unit area of the heat source decreases as the length of the heated surface increases. The heat transfer rate is intensified for the half thermally active surface and high value of Darcy number at higher nanoparticles concentration.