A thermal shock problem in a semiconducting rod under modified Green-Lindsay theory of length l is discussed. The partial differential equations are simplified by applying the Laplace transformation technique. It is assumed that one end of the rod is subjected to a sudden heat source. The governing equations of a semiconducting medium are transformed using the Laplace transform, and analytical expressions for displacement, stress, carrier density, and temperature distribution are obtained. These transformed components are then inverted by the numerical inversion method and are presented graphically to show the results in different theories of thermoelasticity.

In the context of the two-temperature thermoelasticity theory, a novel mathematical–physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The two-dimensional (2D) Cartesian coordinate is used to study the coupling between the thermo-elastic plasma waves and moisture diffusivity. Dimensionless quantities are taken for the main physical fields with some initial conditions in the Laplace transform domain. The linear solutions are obtained analytically along with unknown variables when some conditions are loaded at the surface of the homogenous medium according to the two-temperature theory. The Laplace transform technique in inversion form is utilized with some numerical algebraic approximations in the time domain to observe the exact expressions. Due to the effects of the two-temperature parameter and moisture diffusivity, the numerical results of silicon material have been introduced. The impacts of thermoelectric, thermoelastic, and reference moisture parameters are discussed graphically with some physical explanations.

We explore theoretically the photoacoustic wave propagation created by the photoexcited carrier diffusion in the thermoelastic domain. Consideration is given to the coupling of acoustic and thermomechanical waves. Under the influence of photothermal and thermoelasticity theories, the governing equations are derived. The photoacoustic wave creation is independent of the electron–phonon and electron–hole thermalization and results from the thermoelastic stress brought on by the increase in temperature generated by the light. Considering the optical, elastic, and thermoelastic properties of semiconductor material, photoacoustic signals are predicted by solving a thermal diffusion issue and then a thermoelastic problem in sequence. Using the harmonic wave method, we can solve the mathematical model. All the physical fields in the physical domain can be obtained from the numerical solutions of the mathematical model, including displacements, temperature, acoustic pressure, mechanical distributions, and carrier density diffusion. Two- and three-dimensional (2D and 3D) graphical representations of the thermoelectric, thermo-energy, and thermoelastic parameters are created, and their impacts are compared and analyzed.