A novel compact-slotted four element multiple input multiple output (MIMO) planar monopole antenna is proposed for 5G mmWave N257/N258 and N262 band applications. The antenna, with dimensions of 12 mm × 11.6 mm × 0.508 mm ($1.036{\lambda }_o \times$$1.001{\lambda }_o\times 0.043{\lambda }_o$ where ${\lambda }_o$ is computed at lowest cutoff frequency), is fabricated on a Rogers RT/duroid 5880 (tm) substrate with a relative permittivity of 2.2 and a dielectric loss tangent of 0.0009. The suggested antenna consists of four U-shaped radiating elements (patches) on top of the dielectric material and a slotted ground on the bottom. The radiating elements are fed by a 50-ohm microstrip line feed. To improve the impedance performance of the MIMO antenna, a rectangular strip of 1.3 mm × 0.2 mm and a couple of rectangular slots are added to each radiating element. The first operating band at 27.1 GHz, ranging from 25.9 GHz to 27.8 GHz, is achieved by using slotted U-shaped radiating elements. The second operating band at 48.7 GHz, ranging from 47.1 GHz to 49.9 GHz, is obtained by etching hexagonal slots on the ground. The antenna design achieves an isolation of >27 dB through the orthogonal positioning of radiating elements and slots on the ground. The designed antenna operates at 27 GHz (N257/N258) and 48.7 GHz (N262) bands, exhibiting stable radiation patterns, a peak gain of >5.95 dBi, radiation efficiency of >90%, an envelope correlation coefficient of <10⁻⁶, a total active reflection coefficient of ≤−10 dB, channel capacity losses of <0.03 bits/s/Hz, and a mean effective gain of ≤−3 dB. The simulated and measured results of the antenna show good agreement, making it well-suited for 5G mmWave communication applications.

We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) and undoped regions are equal but length of channel(C) is not equivalent. The proposed Undoped under the gate dielectric High Electron Mobility Transistor reduces the maximum electric field(V) in the channel region and increases the drain current significantly. The High-K dielectric High Electron Mobility Transistor structure obtained a saturated Ion current of 60% higher than the conventional structure. For High critical Power and High-frequency Power transmission Amplifiers utilizes the AlGaN/GaN/SiC-based High Electron Mobility Transistor with an undoped region under the gate with High-K Hafnium oxide. The Proposed advanced High Electron Mobility Transistor Produces a higher Drain current (Id), 54% high transconductance (Gm) with Low On-Resistance (Ron), and High conductivity in comparison to typical High Electron Mobility Transistor. In Addition to these improved characteristics, the Electric field along the Y direction is also observed. The proposed structure formed by Low-k Dielectric materials in the process of Silicon Dioxide(SiO2) and High-k dielectric being Titanium Dioxide (TiO2) and Hafnium Oxide (HfO2) created more opportunities in Power electronics and radio frequency operations.

Ilmenite from the Chhatrapur coast, Odisha, India, was studied using optical microscope, X-ray diffraction, particle size analysis, and electron microprobe to decipher their micromorphology, texture(s), and elemental composition. The micromorphological features by electron microscope indicate that weathering processes such as mechanical and chemical, affected the placer heavy mineral ilmenite. These detrital ilmenites contain TiO₂in the range of 50.25% to 55.41% and FeO 42.72% to 49.99% in addition to Al₂O₃, MgO, MnO, CaO, Na₂O, Cr₂O₃, NiO, ZnO, ZrO₂, V₂O₅, and HfO₂(0 to 0.034%). Ti/(Ti + Fe) ratio in the ilmenite varied from 0.413 to 0.5, which indicates the effect of weathering/oxidation confirming microscopic observations. All the results revealed that these ilmenite grains were derived from the gneissic/granitic, basic and high grade metamorphic rocks, belonging to the Eastern Ghats Group of the Precambrian complex of coastal Orissa.