A fully inkjet-printed strain sensor based on carbon nanotubes (CNTs) was fabricated in this study for microstrain and microcrack detection. Carbon nanotubes and silver films were used as the sensing layer and conductive layer, respectively. Inkjet-printed CNTs easily undergo agglomeration due to van der Waals forces between CNTs, resulting in uneven films. The uniformity of CNT film affects the electrical and mechanical properties. Multi-pass printing and pattern rotation provided precise quantities of sensing materials, enabling the realization of uniform CNT films and stable resistance. Three strain sensors printed eight-layer CNT film by unidirectional printing, rotated by 180° and 90° were compared. The low density on one side of eight-layer CNT film by unidirectional printing results in more disconnection and poor connectivity with the silver film, thereby, significantly increasing the resistance. For 180° rotation eight-layer strain sensors, lower sensitivity and smaller measured range were found because strain was applied to the uneven CNT film resulting in non-uniform strain distribution. Lower resistance and better strain sensitivity was obtained for eight-layer strain sensor with 90° rotation because of uniform film. Given the uniform surface morphology and saturated sheet resistance of the 20-layer CNT film, the strain performance of the 20-layer CNT strain sensor was also examined. Excluding the permanent destruction of the first strain, 0.76% and 1.05% responses were obtained for the 8- and 20-layer strain sensors under strain between 0% and 3128 µε, respectively, which demonstrates the high reproducibility and recoverability of the sensor. The gauge factor (GF) of 20-layer strain sensor was found to be 2.77 under strain from 71 to 3128 µε, which is higher than eight-layer strain sensor (GF = 1.93) due to the uniform surface morphology and stable resistance. The strain sensors exhibited a highly linear and reversible behavior under strain of 71 to 3128 µε, so that the microstrain level could be clearly distinguished. The technology of the fully inkjet-printed CNT-based microstrain sensor provides high reproducibility, stability, and rapid hardness detection.

Cr–Si–N coatings were prepared through reactive direct current magneton sputtering using a high N₂/Ar flow ratio of 1. The addition of Si to improve the mechanical properties and oxidation resistance of Cr–N coatings was examined. The results indicated that the Cr–Si–N coatings with an Si content of 50 at % exhibited a cubic CrN phase with a columnar structure, whereas the coatings with 14 at % Si comprised of a nanocomposite structure, and the coatings with 16–18 at % Si were near-amorphous. The nanocomposite Cr₃₂Si₁₄N₅₄ coating possessed hardness and Young’s modulus values of 17 and 209 GPa, respectively, accompanied with a hardness to effective Young’s modulus (H/E*) value of 0.077 and an elastic recovery (We) level of 55%—all the properties were highest within the as-deposited coating. The addition of Si was also beneficial to reduce the surface roughness and improve the oxidation resistance.

High-Si-content transition metal nitride coatings, which exhibited an X-ray amorphous phase, were proposed as protective coatings on glass molding dies. In a previous study, the Zr–Si–N coatings with Si contents of 24–30 at.% exhibited the hardness of Si₃N₄, which was higher than those of the middle-Si-content (19 at.%) coatings. In this study, the bonding characteristics of the constituent elements of Zr–Si–N coatings were evaluated through X-ray photoelectron spectroscopy. Results indicated that the Zr 3d_5/2 levels were 179.14–180.22 and 180.75–181.61 eV for the Zr–N bonds in ZrN and Zr₃N₄ compounds, respectively. Moreover, the percentage of Zr–N bond in the Zr₃N₄ compound increased with increasing Si content in the Zr–Si–N coatings. The Zr–N bond of Zr₃N₄ dominated when the Si content was >24 at.%. Therefore, high Si content can stabilize the Zr–N compound in the M₃N₄ bonding structure. Furthermore, the thermal stability and chemical inertness of Zr–Si–N coatings were evaluated by conducting thermal cycle annealing at 270 °C and 600 °C in a 15-ppm O₂–N₂ atmosphere. The results indicated that a Zr₂₂Si₂₉N₄₉/Ti/WC assembly was suitable as a protective coating against SiO₂–B₂O₃–BaO-based glass for 450 thermal cycles.

In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. The design includes high-pass/low-pass networks for the 180° phase bit, two high-pass/bandpass networks separated for the 45° and 90° phase bits, and two transmission lines based on traveling wave switch and capacitive load networks that are separated for the 11.25° and 22.5° phase bits. The state-to-state variation in the insertion loss is 11.8 ± 3.45 dB, and an input/output return loss of less than 8 dB was obtained in a frequency range of 8–12 GHz. Moreover, the phase shifter achieved a low root mean square (RMS) phase error and RMS amplitude error of 6.23° and 1.15 dB, respectively, under the same frequency range. The measured input-referred P_1dB of the five primary phase shift states were larger than 29 dBm at 8 GHz. The RMS phase error and RMS amplitude error slightly increased when the temperature increased from 25 to 100 °C. The on-chip phase shifter exhibited no dc power consumption and occupied an area of 2 × 3 mm².

Monolithic Hf–Si–N coatings and multilayered Hf–Si–N coatings with cyclical gradient concentration were fabricated using reactive direct current magnetron cosputtering. The structure of the Hf–Si–N coatings varied from a crystalline HfN phase, to a mixture of HfN and amorphous phases and to an amorphous phase with continuously increasing the Si content. The multilayered Hf₄₈Si₃N₄₉ coatings exhibited a mixture of face-centered cubic and near-amorphous phases with a maximal hardness of 22.5 GPa, a Young’s modulus of 244 GPa and a residual stress of −1.5 GPa. The crystalline phase-dominant coatings exhibited a linear relationship between the hardness and compressive residual stress, whereas the amorphous phase-dominant coatings exhibited a low hardness level of 15–16 GPa; this hardness is close to that of Si₃N₄. Various oxides were formed after annealing of the Hf–Si–N coatings at 600 °C in a 1% O₂–99% Ar atmosphere. Monoclinic HfO₂ formed after Hf₅₄N₄₆ annealing and amorphous oxide formed for the oxidation-resistant Hf₃₂Si₁₉N₄₉ coatings. The oxidation behavior with respect to the Si content was investigated by using transmission electron microscopy and X-ray photoelectron spectroscopy.