Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extraction efficiency of the LED chip. Separate evaluation of these parameters is helpful for further optimization of the heterostructure and chip designs. The data obtained enable making a guess on the temperature dependence of the radiative and Auger recombination coefficients, which may be important for identification of dominant mechanisms responsible for the efficiency droop in III-nitride LEDs. Thermal degradation of the LED performance in terms of the emission efficiency is also considered.

The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

Optics manufacturing technology is predicted to play a major role in the future production of integrated photonic circuits. One of the major drawbacks in the realization of photonic circuits is the damage of optical materials by intense laser pulses. Here, we report on the preparation of a series of organic–inorganic hybrid photoresists that exhibit enhanced laser‐induced damage threshold. These photoresists showed to be candidates for the fabrication of micro‐optical elements (MOEs) using three‐dimensional multiphoton lithography. Moreover, they demonstrate pattern ability by nanoimprint lithography, making them suitable for future mass production of MOEs.