Laboratoire de Chimie des Polymères Organiques (LCPO), CNRS UMR 5629, ENSCPB, Université de Bordeaux, 16 Avenue Pey-Berland, F-33607 Pessac Cedex, France
Dr. Cian Cummins
Laboratoire de Chimie des Polymères Organiques (LCPO), CNRS UMR 5629, ENSCPB, Université de Bordeaux, 16 Avenue Pey-Berland, F-33607 Pessac Cedex, France
Optical metamaterials are artificially engineered architectures that exhibit desired optical properties not found in nature. Bespoke design requires the ability to define shape, size, orientation, and composition of material structures on the nanometer length scale. Bottom‐up self‐assembly methods, such as block copolymer (BCP) templating, offer unique pathways to tailored features, at spatial resolution not routinely achieved by conventional top‐down techniques. In this review, the authors provide the general readership with basic concepts of the underlying fabrication processes and examine optical phenomena arising from BCP‐derived metamaterials and nanoresonators, with both dielectric and plasmonic characteristics. A number of diverse structural conformations designed by BCP templating and their implementation in optical devices is evaluated. The discussion includes 3D metamaterials, such as gyroidal and hyperbolic arrangements, as well as 2D metasurfaces. Based on recent developments in exploring these emerging structural and material configurations, the review further highlights unexplored opportunities offered by BCP self‐assembly for novel metamaterials and metasurface devices.
‘Directing’ block copolymer (BCP) patterns is a possible option for future semiconductor device patterning, but pattern transfer of BCP masks is somewhat hindered by the inherently low etch contrast between blocks. Here, we demonstrate a ‘fab’ friendly methodology for forming well-registered and aligned silicon (Si) nanofins following pattern transfer of robust metal oxide nanowire masks through the directed self-assembly (DSA) of BCPs. A cylindrical forming poly(styrene)-block-poly(4-vinyl-pyridine) (PS-b-P4VP) BCP was employed producing ‘fingerprint’ line patterns over macroscopic areas following solvent vapor annealing treatment. The directed assembly of PS-b-P4VP line patterns was enabled by electron-beam lithographically defined hydrogen silsequioxane (HSQ) gratings. We developed metal oxide nanowire features using PS-b-P4VP structures which facilitated high quality pattern transfer to the underlying Si substrate. This work highlights the precision at which long range ordered ∼10 nm Si nanofin features with 32 nm pitch can be defined using a cylindrical BCP system for nanolithography application. The results show promise for future nanocircuitry fabrication to access sub-16 nm critical dimensions using cylindrical systems as surface interfaces are easier to tailor than lamellar systems. Additionally, the work helps to demonstrate the extension of these methods to a ‘high χ’ BCP beyond the size limitations of the more well-studied PS-b-poly(methyl methylacrylate) (PS-b-PMMA) system.
The self-assembly of ultra-high molecular weight (UHMW) block copolymers (BCPs) remains a complex and time-consuming endeavor owing to the high kinetic penalties associated with long polymer chain entanglement. In this work, we report a unique strategy of overcoming these kinetic barriers through precision solvent annealing of an UHMW polystyrene-block-poly(2-vinylpyridine) BCP system (Mw: ∼800 kg/mol) by fast swelling to very high levels of solvent concentration (ϕs). Phase separation on timescales of ∼10 min is demonstrated once a thickness-dependent threshold ϕs value of ∼0.80–0.86 is achieved, resulting in lamellar feature spacings of over 190 nm. The threshold ϕs value was found to be greater for films with higher dry thickness (D0) values. Tunability of the domain morphology is achieved through controlled variation of both D0 and ϕs, with the kinetically unstable hexagonal perforated lamellar (HPL) phase observed at ϕs values of ∼0.67 and D0 values of 59–110 nm. This HPL phase can be controllably induced into an order–order transition to a lamellar morphology upon further increase of ϕs to 0.80 or above. As confirmed by grazing-incidence small-angle X-ray scattering, the lateral ordering of the lamellar domains is shown to improve with increasing ϕs up to a maximum value at which the films transition to a disordered state. Thicker films are shown to possess a higher maximum ϕs value before transitioning to a disordered state. The swelling rate is shown to moderately influence the lateral ordering of the phase-separated structures, while the amount of hold time at a particular value of ϕs does not notably enhance the phase separation process. These large period self-assembled lamellar domains are then employed to facilitate pattern transfer using a liquid-phase infiltration method, followed by plasma etching, generating ordered, high aspect ratio Si nanowall structures with spacings of ∼190 nm and heights of up to ∼500 nm. This work underpins the feasibility of a room-temperature, solvent-based annealing approach for the reliable and scalable fabrication of sub-wavelength nanostructures via BCP lithography.