Copper-doped zinc oxide films (Zn_1−xCu_xO) (x = 0, 2%, 4%, 6%) were fabricated on conductive substrates using the sol-gel process. The crystal structure, optical and resistive switching properties of Zn_1−xCu_xO films are studied and discussed. RRAM is made using Zn_1−xCu_xO as the resistive layer. The results show that the (002) peak intensity and grain size of Zn_1−xCu_xOfilms increase from 0 to 6%. In addition, PL spectroscopy shows that the oxygen vacancy defect density of Zn_1−xCu_xO films also increases with the increase in Cu. The improved resistive switching performance of the RRAM device can be attributed to the formation of conductive filaments and the destruction of more oxygen vacancies in the Zn_1−xCu_xO film. Consequently, the RRAM device exhibits a higher low resistance state to high resistance state ratio and an HRS state of higher resistance value.

Tungsten-doped TiO₂ thin films were prepared by sol–gel method on fluorine-doped tin oxide-coated substrates as working electrodes of dye-sensitized solar cells. The influences of different W doping (0, 2, 4, 6, and 8 at%) on the microstructure, optical, and photovoltaic properties of the W-TiO₂ thin-film DSSCs were studied by the measurement of X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Brunauer–Emmett–Teller (BET) analysis, and electrochemical impedance spectroscopy (EIS). An optimal DSSCs performance was observed with a 6 at% W-doped TiO₂ thin film, resulting in a Voc of 0.68 V, a Jsc of 20.2 mA/cm², an FF of 68.6%, and an efficiency (η) of 9.42%. The efficiency of DSSCs with 6 at% W-doped TiO₂ photoanode improved by 75%. This is because the 6 at% W-doped TiO₂ thin film increases the specific surface area and electron transfer rate.

Refractive index measurements have been an important task for a long time because that index plays an essential role in describing the optical properties of a material. Many methods have been developed to perform that task. Some of them use interferometry to achieve high precision. However, these configurations are complicated. Some measure the critical angle using simple structures, but their accuracy is unsatisfactory because it is difficult to judge the exact critical angle with intensity variations. Here, we propose several new schemes based on measuring the polarization change in the total internal reflection. The proposed method has the merits of simple structure and easy incident angle determination that gives the maximum phase change. Additionally, it is possible to find the material dispersion by measuring the wavelength dependence of the polarization ellipticity. Some useful formulas relating the refractive index to the maximum phase change are obtained. This work can provide valuable alternatives for refractive index measurement.

This study investigates the impact of plasma gradient modification and gradient illumination on the optoelectronic properties of buckypaper (BP), a flexible and large-scale material composed of multi-walled carbon nanotubes (MWCNTs). The BP samples were subjected to argon ion plasma treatment at varying power levels and durations, thereby creating different carrier concentration gradients on the surface. The photovoltage and photocurrent responses of the samples were then measured under uniform full illumination and gradient illumination conditions. The findings revealed that both plasma gradient modification and gradient illumination significantly enhanced the optoelectronic performance of BP. Notably, the combined application of these two methods yielded superior results compared to the application of either method alone. Specifically, the optimal plasma power for improving BP was found to be 20 W. Under conditions of plasma gradient modification and gradient illumination, a photovoltage of 267.76 μV was generated, which represents a 21.44 times increase, and a photocurrent of 15.69 μA, reflecting a 32.69 times enhancement. The mechanism underlying this optoelectronic effect can be attributed to the presence of π-bonds in the carbon atoms. These π-bonds are excited by photons, resulting in the generation of small voltages and currents. This study underscores the potential of BP as an optoelectronic material and introduces a novel approach to enhance its optoelectronic properties through plasma gradient modification and gradient illumination.

This study investigates the impact of plasma gradient modification and gradient illumination on the optoelectronic properties of buckypaper (BP), a flexible and large-scale material composed of multi-walled carbon nanotubes (MWCNTs). The BP samples were subjected to argon ion plasma treatment at varying power levels and durations, thereby creating different carrier concentration gradients on the surface. The photovoltage and photocurrent responses of the samples were then measured under uniform full illumination and gradient illumination conditions. The findings revealed that both plasma gradient modification and gradient illumination significantly enhanced the optoelectronic performance of BP. Notably, the combined application of these two methods yielded superior results compared to the application of either method alone. Specifically, the optimal plasma power for improving BP was found to be 20W. Under conditions of plasma gradient modification and gradient illumination, a photovoltage of 267.76 μV was generated, which represents a 21.44 times increase, and a photocurrent of 15.69 μA, reflecting a 32.69 times enhancement. The mechanism underlying this optoelectronic effect can be attributed to the presence of π-bonds in the carbon atoms. These π-bonds are excited by photons, resulting in the generation of small voltages and currents. This study underscores the potential of BP as an optoelectronic material and introduces a novel approach to enhance its optoelectronic properties through plasma gradient modification and gradient illumination.

In the past, the waveguide electroabsorption effect has generally been used as an intensity modulator for quasi-monochromatic light, such as lasers. Here, we study how this effect affects polychromatic light spectra. We find that for light with a Gaussian distribution spectrum, the spectral peak shift (red shift or blue shift) can be controlled by the magnitude of the applied voltage, as long as the center wavelength and the spectral band are properly selected. This result can be used as a data transmission scheme at the integrated chip level or in free space. It may offer a good option for some other light sources, such as low-cost LED or ELED (edge emitting LED), with wider spectral bandwidths.