Thin films of zinc oxide (ZnO) doped with transition metals have recently gained significant attention due to their potential applications in a wide range of optoelectronic devices. This study focuses on ZnO thin films doped with the transition metals Co, Fe, and Zr, exploring various aspects of their structural, morphological, optical, electrical, and photoluminescence properties. The thin films were produced using RF and DC co-sputtering techniques. The X-ray diffraction (XRD) analysis revealed that all the doped ZnO thin films exhibited a stable wurtzite crystal structure, showcasing a higher structural stability compared to the undoped ZnO, while the atomic force microscopy (AFM) imaging highlighted a distinctive granular arrangement. Energy-dispersive X-ray spectroscopy was employed to confirm the presence of transition metals in the thin films, and Fourier-transform infrared spectroscopy (FTIR) was utilized to investigate the presence of chemical bonding. The optical characterizations indicated that doping induced changes in the optical properties of the thin films. Specifically, the doped ZnO thin film’s bandgap experienced a significant reduction, decreasing from 3.34 to 3.30 eV. The photoluminescence (PL) analysis revealed distinguishable emission peaks within the optical spectrum, attributed to electronic transitions occurring between different bands or between a band and an impurity. Furthermore, the introduction of these transition metals resulted in decreased resistivity and increased conductivity, indicating their positive influence on the electrical conductivity of the thin films. This suggests potential applications in solar cells and light-emitting devices.

The increasing demand for energy and electricity and the depletion of fossil fuels are global problems. In recent years, dye-sensitized solar cell (DSSC) technologies have gained notoriety for their application in solar energy. DSSCs are considered a promising alternative renewable energy source to both inorganic and organic photovoltaic (PV) cells. Many types of dyes are being investigated to enhance the light-harvesting properties of DSSCs, but the actual realization of these absorbers in cell structure requires optimum parameters. The main aim of this study was to simulate proposed zinc phthalocyanine (ZnPC)-based structures to validate their design, assess their performance for commercial implementation, and optimize the cell parameters for optimum efficiency. To that end, Scaps-1D was employed to evaluate the performance of DSSCs to determine their optimum parameters. We found that ZnPC and isopropoxy ZnPC molecules outperform others molecules because of better optoelectronic properties. Several other parametric effects, such as photoactive layer thicknesses, doping densities, trap densities, and charge carrier mobilities, were also evaluated to observe their impact on device performance. The results show that moderate thickness, low defect density, moderate doping, and charge carrier mobility are favorable for better device performance due to low recombination losses, electrical losses, and better transport of charge carriers. The utmost power conversion efficiency values found for ZnPC- and ZnPC: PC70BM-based DSSCs after optimization were 9.50% and 9.81%. This paper also suggests a practical method for efficiently using DSSC cells by modifying factors that are significantly reliant on DSSC performance and output.