This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-area or flexible substrate applications. Additionally, this review highlights the physical mechanisms governing the optoelectronic properties of high-performance organic materials, particularly photoinduced processes relevant to charge carrier photogeneration. It discusses the unique benefits of organic materials over traditional inorganic materials, including their light weight, simple processing, and flexibility. The report delves into the challenges related to stability, scalability, and performance, while highlighting the wide range of electronic properties exhibited by organic materials, which are critical for their performances in optoelectronic devices. Furthermore, it addresses the need for further research and development in this field to achieve consistent performance across different types of devices.

Thin films of zinc oxide (ZnO) doped with transition metals have recently gained significant attention due to their potential applications in a wide range of optoelectronic devices. This study focuses on ZnO thin films doped with the transition metals Co, Fe, and Zr, exploring various aspects of their structural, morphological, optical, electrical, and photoluminescence properties. The thin films were produced using RF and DC co-sputtering techniques. The X-ray diffraction (XRD) analysis revealed that all the doped ZnO thin films exhibited a stable wurtzite crystal structure, showcasing a higher structural stability compared to the undoped ZnO, while the atomic force microscopy (AFM) imaging highlighted a distinctive granular arrangement. Energy-dispersive X-ray spectroscopy was employed to confirm the presence of transition metals in the thin films, and Fourier-transform infrared spectroscopy (FTIR) was utilized to investigate the presence of chemical bonding. The optical characterizations indicated that doping induced changes in the optical properties of the thin films. Specifically, the doped ZnO thin film’s bandgap experienced a significant reduction, decreasing from 3.34 to 3.30 eV. The photoluminescence (PL) analysis revealed distinguishable emission peaks within the optical spectrum, attributed to electronic transitions occurring between different bands or between a band and an impurity. Furthermore, the introduction of these transition metals resulted in decreased resistivity and increased conductivity, indicating their positive influence on the electrical conductivity of the thin films. This suggests potential applications in solar cells and light-emitting devices.

This work focuses on preparing TiO₂, CdS, and composite TiO₂:CdS thin films for photovoltaic applications by thermal evaporation. The suggested materials exhibit very good optical and electrical properties and can play a significant role in enhancing the efficiency of the device. Various microscopy and spectroscopy techniques were considered to investigate the optical, morphological, photoluminescence, and electrical properties. FTIR confirms the material identification by displaying some peaks in the fingerprint region. UV Vis spectroscopy yields high transmission (80–90%) and low absorbance (5–10%) within the spectral region from 500 nm to 800 nm for the composite thin films. The optical band gap values for CdS, TiO_2, and TiO₂:CdS thin films are 2.42 eV, 3.72 eV, and 3.6 eV. XRD was utilized to analyze the amorphous nature of the thin films, while optical and SEM microscopy were employed to examine the morphological changes caused by the addition of CdS to TiO₂. The decrease in the bandgap of the composite thin films was determined by the Tauc plot, which is endorsed due to the band tailing effects. Photoluminescence spectroscopy depicts several emission peaks in the visible region when they are excited at different wavelengths, and the electrical measurement enhances the material conductivity. Furthermore, the proposed electron transport materials (TiO₂, CdS, TiO₂:CdS) were simulated with different perovskite materials to validate their design by employing the SCAPS-1D program and assess their performance in commercial implementation. The observed results suggest that TiO₂:CdS is a promising candidate to be used as an ETM in PSC with enhanced productivity.

This work is aimed at investigating the viability of utilizing cadmium sulfide (CdS) as a buffer layer in CdTe solar cells by analyzing and assessing its optical, photoluminescence, morphological, and electrical properties. These films were fabricated using a thermal coating technique. Optical microscopy was used to observe the changes in morphology resulting from the doping of rare-earth metals such as samarium (Sm) and lanthanum (La) to CdS, while the granular-like structure of the sample was confirmed by scanning electron microscopy. The objective of incorporating Sm and La ions into CdS was to enhance photoconductivity and optimize the optical bandgap, aiming to create a viable charge transport material for photovoltaic devices with enhanced efficiency. Through that process, a noticeable decrease in transmission, from approximately 80 to 68% in the visible region, was observed. Additionally, the bandgap value was reduced from 2.43 to 2.27 eV. Furthermore, during the analysis of the photoluminescence spectra, it was observed that emission peaks occurred in the visible region. These emissions were attributed to electronic transitions that took place via band-to-band and band-to-impurity interactions. The electrical measurements showed an enhancement in conductivity due to the decrease in the bandgap. This notable consequence of the doped materials suggests their utilization in photovoltaic systems.

Lead-free perovskite solar cells (PSCs) have sparked considerable interest in the optoelectronics research community and gained recognition in recent years due to their practical use in solar energy. The primary obstacles in producing PSCs are stability and toxicity due to the immersion of organic-cation and lead in perovskite material. This study presents an electrical simulation of a caesium–indium-based lead-free hybrid PSC using SCAPS-1D software. Spiro-MeOTAD is a typical hole transport material (HTM) used in PSC, although it has not always been suggested because of its high design cost and stability constraints. This study aims to evaluate the performance of lead-free double perovskite material as an absorber layer along with different hole transport materials (HTM). We discovered that the lead-free double perovskite combined with graphene-oxide (GO) and reduced graphene oxide (rGO) produces the best results. Furthermore, the light-harvesting layer and HTM layer has optimized via thickness, defects, doping concentration, and temperature. The improved PSC structure achieves power conversion efficiency (PCE) of more than 24%, and the results of the optimized PSC have compared to the results of the experimentally implemented PSC. This work also used C–V measurements on the optimized structure to determine the device contact potential and doping concentration. The optimized results suggest a feasible future route for creating lead-free PSC with high productivity and free from stability or toxicity issues.