Periodic structures with a sub‐wavelength pitch have been known since Hertz conducted his first experiments on the polarization of electromagnetic waves. While the use of these structures in waveguide optics was proposed in the 1990s, it has been with the more recent developments of silicon photonics and high‐precision lithography techniques that sub‐wavelength structures have found widespread application in the field of photonics. This review first provides an introduction to the physics of sub‐wavelength structures. An overview of the applications of sub‐wavelength structures is then given including: anti‐reflective coatings, polarization rotators, high‐efficiency fiber–chip couplers, spectrometers, high‐reflectivity mirrors, athermal waveguides, multimode interference couplers, and dispersion engineered, ultra‐broadband waveguide couplers among others. Particular attention is paid to providing insight into the design strategies for these devices. The concluding remarks provide an outlook on the future development of sub‐wavelength structures and their impact in photonics. image

We explore, to the best of our knowledge, the potential of diffractionless subwavelength grating waveguides for sensing applications. We show that by subwavelength patterning of silicon-wire waveguides the field delocalization can be engineered to increase the sensitivity. Fully vectorial 3D-FDTD simulations confirm the sensitivity enhancement, achieving sensitivities of $0.83\mathrm{RIU}/\mathrm{RIU}$ and $1.5·{10}^{-3}\mathrm{RIU}/\mathrm{nm}$ for bulk and surface sensing, respectively, which compare favorably to state-of-the-art sensing waveguides.

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of $-1.3\mathrm{dB}$, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

We present a new type of mid-infrared silicon-on-insulator (SOI) waveguide. The waveguide comprises a sub-wavelength lattice of holes acting as lateral cladding while at the same time allowing for the bottom oxide (BOX) removal by etching. The waveguide loss is determined at the wavelength of 3.8 μm for structures before and after being underetched using both vapor phase and liquid hydrofluoric acid (HF). A propagation loss of 3.4 dB/cm was measured for a design with a 300 nm grating period and 150 nm holes after partial removal (560 nm) of BOX by vapor phase HF etching. We also demonstrate an alternative design with 550 nm period and 450 nm holes, which allows a faster and complete removal of the BOX by liquid phase HF etching, yielding the waveguide propagation loss of 3.6 dB/cm.

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional $L$-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% ($-20\mathrm{dB}$). A measured coupling efficiency of $-2.7\mathrm{dB}$ (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

As most integrated optics platforms, silicon offers only a fixed set of material refractive indices for designing devices. The ability of sub-wavelength patterned structures to synthesize arbitrary equivalent index values between nSi ~ 3.5 and nair=1 has thus enabled completely new design approaches that have led to silicon waveguide devices with breakthrough performance. This review covers the latest advances in sub-wavelength structured fiber-to-chip grating couplers and multimode interference couplers. We discuss, among others, single-etch grating couplers with high coupling efficiency ( -1.8 dB), and broad bandwidth ( 115 nm at 3 dB), as well as ultra-short, high performance multi-mode interference couplers. We furthermore introduce the concept of dispersion engineering with sub-wavelength structures, showing its potential to increase the bandwidth of waveguide devices, including multi-mode interference couplers covering a 450 nm wavelength span.